Results 41 to 50 of about 7,600,943 (308)

Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors [PDF]

, 2010
Interface and near oxide traps in small gate area MOS transistors (gate area ,1 mm2) lead to RTS noise which implies the emergence of noisy pixels in CMOS image sensors.
P. Magnan, P. Martin-Gonthier, E. Havard, Havard, E., Magnan, Pierre, Martin-Gonthier, Philippe   +5 more
core   +1 more source

Uniform Amorphization of Crystalline Silicon Surfaces Enabled by Deep Ultraviolet Femtosecond Laser Pulses

Advanced Engineering Materials, EarlyView.
Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali, Magali Gregoire, Matys Guyard, Tatiana Itina, David Grojo, Pol Sopeña   +5 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]

, 2012
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Goiffon, Vincent, Place, Sébastien, Gaillardin, Marc, Estribeau, Magali, Virmontois, Cédric, Girard, Sylvain, Magnan, P., Gaillardin, M., Martin-Gonthier, P., Cervantes, P., Paillet, Philippe, Cervantes, Paola, Magnan, Pierre, Martin-Gonthier, Philippe   +13 more
core   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation [PDF]

, 2009
In this paper we present a study of ionizing radiation effects, up to 5 kGy, in several CMOS image sensors manufactured using a commercial 0.18 μm technology dedicated to ...
Goiffon, Vincent, Estribeau, Magali, Magnan, Pierre   +2 more
core  

Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]

, 2012
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, A., Goiffon, Vincent, Corbière, Franck, Bardoux, Alain, Virmontois, Cédric, Goiffon, V., Girard, Sylvain, Corbiere, F., Magnan, Pierre, Magnan, P.   +9 more
core   +1 more source

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

IEEE Journal of the Electron Devices Society, 2022
Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600V lateral SiC power MOSFETs and low-voltage SiC CMOS devices.
Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Ayman Fayed, Marvin H. White, Anant K. Agarwal   +9 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

A digital high-dynamic-range CMOS image sensor with multi-integration and pixel readout request [PDF]

, 2007
A novel principle has been developed to build an ultra wide dynamic range digital CMOS image sensor. Multiple integrations are used to achieve the required dynamic.
Segura, Josep, Philippe Martin-Gonthier, Guilvard, Alexandre, Alexandre Guilvard, Josep Segura, Magnan, Pierre, Pierre Magnan, Martin-Gonthier, Philippe   +7 more
core   +1 more source