Results 51 to 60 of about 7,631,832 (303)
Advanced Functional Materials, EarlyView.Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Технологія та конструювання в електронній апаратурі, 2012 There has been designed, manufactured and tested a VLSI providing as a part of the microelectronic coordinate-sensitive detector the simultaneous elemental analysis of all the principles of the substance.
V. P. Sidorenko +2 more
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A FAST TRANSIENT CAPACITOR-LESS LDO REGULATOR WITH ACTIVE FREQUENCY COMPENSATION [PDF]
Proceedings on Engineering SciencesThis paper introduces a low dropout (LDO) regulator designed for system-on-chip applications, operating without an external output capacitor. The design uses a folded cascode amplifier and an active capacitor circuit with a fast comparator to detect the ...
Kunal Keshav , P. Manikandan
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023 Standard complementary metal–oxide–semiconductor (CMOS) technology and its advanced flavors in the form of FinFETs have propelled the electronic industry to its extraordinary success.
Sumeet Kumar Gupta
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Advanced Functional Materials, EarlyView.In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian +1 more
wiley +1 more source
Prospects of III-Vs for Logic Applications [PDF]
Журнал нано- та електронної фізики, 2012 The increasing challenges for further scaling down of Si CMOS require the study of alternative channel materials. This paper highlights the significance of III-V compound semiconductor materials in order to face the looming fate of Si CMOS technology ...
U.P. Gomes +5 more
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A Multidisciplinary Approach to High Throughput Nuclear Magnetic Resonance Spectroscopy
Sensors, 2016 Nuclear Magnetic Resonance (NMR) is a non-contact, powerful structure-elucidation technique for biochemical analysis. NMR spectroscopy is used extensively in a variety of life science applications including drug discovery.
Hossein Pourmodheji +2 more
doaj +1 more source
Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film
Advanced Functional Materials, EarlyView.ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu +7 more
wiley +1 more source
Low-Cost Microbolometer Type Infrared Detectors
Micromachines, 2020 The complementary metal oxide semiconductor (CMOS) microbolometer technology provides a low-cost approach for the long-wave infrared (LWIR) imaging applications.
Le Yu +5 more
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Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET
IEEE Journal of the Electron Devices Society, 2022 For the first time, by using 3-D TCAD, the advantage of using complementary FET (CFET), which has vertically stacked nanosheet nFET and pFET with shared gate, is compared to standard CMOS with nanosheet FETs in perspective of CMOS inverter performance ...
Seung-Geun Jung +4 more
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