Results 71 to 80 of about 7,631,832 (303)

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Robust Interlayer Exciton Interplay in a Twisted van der Waals Heterotrilayer on a Broadband Bragg Reflector up to Room Temperature

Advanced Functional Materials, EarlyView.
In this work, we highlight a unique material platform capable of producing three distinct room temperature (RT) photoluminescence (PL) resonances from spatially separated regions composed of a heterobilayer (HBL), a homobilayer (HoBL), and an heterotrilayer (HTL) transition metal dichalcogenide (TMD) heterostructures configuration on a highly ...
Bhabani Sankar Sahoo, Shachi Machchhar, Avijit Barua, Martin Podhorský, Seth Ariel Tongay, Takashi Taniguchi, Kenji Watanabe, Chirag Chandrakant Palekar, Stephan Reitzenstein   +8 more
wiley   +1 more source

Nanopore-CMOS Interfaces for DNA Sequencing

Biosensors, 2016
DNA sequencers based on nanopore sensors present an opportunity for a significant break from the template-based incumbents of the last forty years. Key advantages ushered by nanopore technology include a simplified chemistry and the ability to interface ...
Sebastian Magierowski, Yiyun Huang, Chengjie Wang, Ebrahim Ghafar-Zadeh   +3 more
doaj   +1 more source

Gate‐Programmable Linearization of Atomically Thin Nanoelectromechanical Resonators via Duffing Nonlinearity Cancellation

Advanced Functional Materials, EarlyView.
Gate bias is used to cancel Duffing nonlinearity in atomically thin MoS2 drumhead resonators, switching their response from hardening to softening and creating a nearly linear operating point. This electrical control suppresses hysteresis, enables stronger linear drive, and improves signal‐to‐noise ratio, offering a practical route to stable 2D NEMS ...
Pengcheng Zhang, Miroslav Haluska, Cosmin Roman, Christofer Hierold   +3 more
wiley   +1 more source

BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2018
Three-independent-gate field-effect transistors (TIGFETs) are a promising next-generation device technology. Their controllable-polarity capability allows for superior design of arithmetic and sequential logic gates.
Jorge Romero-Gonzalez, Pierre-Emmanuel Gaillardon   +1 more
doaj   +1 more source

Mimicking Silent Synapse Recruitment: A SiOx/Cu‐Pancake Memristive Device For Analog Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Electroforming‐free TiN/SiOx/Cu/SiOx/TiN memristive devices exploit pancake‐like Cu nanoparticles embedded in a SiOx double layer to create a heterogeneous Schottky‐barrier landscape. Under bias, oxygen‐vacancy redistribution progressively lowers local barriers and recruits initially inactive Cu‐PC pathways into a parallel conduction ensemble, enabling
Rouven Lamprecht, Ole Gronenberg, Sahitya Yarragolla, Tobias Gergs, Richard Marquardt, Victor Witte, Jürgen Carstensen, George Popkirov, Jan Trieschmann, Lorenz Kienle, Hermann Kohlstedt   +10 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Chamber‐Specific Decellularized Extracellular Matrices Differentially Modulate Cardiomyocyte Subtypes to Drive Engineered Heart Tissue Development and Function

Advanced Healthcare Materials, EarlyView.
Chamber‐specific decellularized extracellular matrices (ECMs) were developed, preserving native proteomic profiles of ventricular and atrial myocardium. These innate biochemical cues differentially modulate cardiomyocyte subtypes to drive engineered heart tissue development and function, highlighting the importance of incorporating regional ECM cues in
Dong Gyu Hwang, Myungji Kim, Hwanyong Choi, Jinseon Park, Minji Kim, Donghwan Kim, Bo Ram Lee, Jinah Jang   +7 more
wiley   +1 more source

Design of readout circuits for mid-wavelength IR photodiode arrays

Технологія та конструювання в електронній апаратурі, 2004
Discussed are the problems of designing readout circuits for IR-wavelength photodiode arrays intended, for example, for reading and processing information from array radiation detectors based on materials such as InSb and HgCdTe. The potential functional
V. P. Reva, F. F. Sizov
doaj