Scientific ReportsGraphene Nano Scrolls (GNSs) and Zigzag graphene nanoscrolls (ZGNSs) are semi-one-dimensional materials with exceptional electrical and optical properties, making them attractive to be used in nanoelectronics and complementary metal–oxide–semiconductor ...
Ali Sadeqian +3 more
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Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors [PDF]
, 2013 This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters.
Pelamatti, Alice +4 more
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Overview of CMOS process and design options for image sensor dedicated to space applications [PDF]
, 2005 With the growth of huge volume markets (mobile phones, digital cameras…) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain.
Corbière, Franck +5 more
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BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2018 Three-independent-gate field-effect transistors (TIGFETs) are a promising next-generation device technology. Their controllable-polarity capability allows for superior design of arithmetic and sequential logic gates.
Jorge Romero-Gonzalez +1 more
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Repair Techniques for Hybrid Nano/CMOS Computational Architecture
, 2009 —Presence of high defect rate in nanofabrics due to the inadequate fabrication processes has held back the development of emerging technology architecture. In this work, we propose two repair techniques to provide high level of defect tolerance in lookup
Srivastava, Saket +2 more
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Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors [PDF]
, 2010 Interface and near oxide traps in small gate area MOS transistors (gate area ,1 mm2) lead to RTS noise which implies the emergence of noisy pixels in CMOS image sensors.
P. Magnan +5 more
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Design of readout circuits for mid-wavelength IR photodiode arrays
Технологія та конструювання в електронній апаратурі, 2004 Discussed are the problems of designing readout circuits for IR-wavelength photodiode arrays intended, for example, for reading and processing information from array radiation detectors based on materials such as InSb and HgCdTe. The potential functional
V. P. Reva, F. F. Sizov
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Time-based circuits for communication systems in advanced CMOS technology [PDF]
, 2009 Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.This electronic version was submitted by the student author.
Park, Min, Ph. D. Massachusetts Institute of Technology
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Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]
, 2012 This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, A. +9 more
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A Standard CMOS Humidity Sensor without Post-Processing
Sensors, 2011 A 2 µW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 µm CMOS technology without post-processing.
Oleg Nizhnik +2 more
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