Results 61 to 70 of about 7,631,832 (303)
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
The technologies of manufacture silicon readout devices for IR sensor, comparative analysis
Технологія та конструювання в електронній апаратурі, 2007 A comparative analysis of the advantages and disadvantages of two technologies for fabricating readout circuits for infrared photodiodes has been carried out: complementary MOS (CMOS) technology and charge-coupled device (CCD) technology based on n ...
V. Р. Reva +4 more
doaj
Advanced Functional Materials, EarlyView.Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source
Scientific ReportsGraphene Nano Scrolls (GNSs) and Zigzag graphene nanoscrolls (ZGNSs) are semi-one-dimensional materials with exceptional electrical and optical properties, making them attractive to be used in nanoelectronics and complementary metal–oxide–semiconductor ...
Ali Sadeqian +3 more
doaj +1 more source
CMOS Technology Integrated Terahertz Rectifier
Proceedings, 2017 We present new developments of CMOS compatible direct conversion terahertz detector operating at room temperature. The rectenna consists of an integrated antenna, realized on the surface of the integrated circuit and connected to a nanometric metallic ...
Rosario Rao +3 more
doaj +1 more source
, 2022 International audience ; This chapter describes tunable circuits in CMOS and BiCMOS technologies. First, active and passive basic components are briefly described: MOS and bipolar transistors, and passive components like MOM capacitors, and transmission lines.
Ferrari, Philippe +3 more
openaire +1 more source
Advanced Functional Materials, EarlyView.Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Strained Silicon Layer in CMOS Technology
, 2014 Semiconductor industry is currently facing with the fact that conventional submicron CMOS technology is approaching the end of their capabilities, at least when it comes to scaling the dimensions of the components.
Tatjana Pešić-Brđanin, B. Dokic
semanticscholar +1 more source
Advanced Functional Materials, EarlyView.Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone +8 more
wiley +1 more source
A Low-Cost CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass
Sensors, 2011 This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive
Mohd Haris Md Khir, Hongwei Qu, Peng Qu
doaj +1 more source