Results 61 to 70 of about 7,600,943 (308)
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Radiation Effects on CMOS Image Sensors With Sub-2 µm Pinned Photodiodes [PDF]
, 2012 CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been ...
Place, Sébastien +5 more
core +1 more source
Prospects of III-Vs for Logic Applications [PDF]
Журнал нано- та електронної фізики, 2012 The increasing challenges for further scaling down of Si CMOS require the study of alternative channel materials. This paper highlights the significance of III-V compound semiconductor materials in order to face the looming fate of Si CMOS technology ...
U.P. Gomes +5 more
doaj
Low-Cost Microbolometer Type Infrared Detectors
Micromachines, 2020 The complementary metal oxide semiconductor (CMOS) microbolometer technology provides a low-cost approach for the long-wave infrared (LWIR) imaging applications.
Le Yu +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Development of high-performances monolithic CMOS detectors for space applications [PDF]
, 2002 This paper describes the development of a 750x750 pixels CMOS image sensor for star tracker applications. A first demonstrator of such a star tracker called SSM star tracker built around a 512x512 detector has been recently developed and proves the ...
Franck Corbiere +17 more
core +1 more source
Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies
Advanced Functional Materials, EarlyView.The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley +1 more source
Analysis and Optimization of Noise Response for Low-Noise CMOS Image Sensors [PDF]
, 2012 CMOS image sensors are nowadays widely used in imaging applications and particularly in low light flux applications. This is really possible thanks to a reduction of noise obtained, among others, by the use of pinned photodiode associated with a ...
Molina, Romain +7 more
core +1 more source
The technologies of manufacture silicon readout devices for IR sensor, comparative analysis
Технологія та конструювання в електронній апаратурі, 2007 A comparative analysis of the advantages and disadvantages of two technologies for fabricating readout circuits for infrared photodiodes has been carried out: complementary MOS (CMOS) technology and charge-coupled device (CCD) technology based on n ...
V. Р. Reva +4 more
doaj
A Multidisciplinary Approach to High Throughput Nuclear Magnetic Resonance Spectroscopy
Sensors, 2016 Nuclear Magnetic Resonance (NMR) is a non-contact, powerful structure-elucidation technique for biochemical analysis. NMR spectroscopy is used extensively in a variety of life science applications including drug discovery.
Hossein Pourmodheji +2 more
doaj +1 more source