Novel readout circuit architecture for CMOS image sensors minimizing RTS noise [PDF]
This letter presents a novel readout architecture and its associated readout sequence for complementary metal–oxide– semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel
Philippe Martin-Gonthier +3 more
core +1 more source
Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime
The p‐type nanowire field‐effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in‐depth technology computer‐aided design (TCAD) with quantum models for sub‐10‐nm advanced logic technology.
Eunseon Yu +7 more
doaj +1 more source
Design and Applications of Integrated Transducers in Commercial CMOS Technology
Monolithic integration of Microelectromechanical Systems (MEMS) directly within CMOS technology offers enhanced functionality for integrated circuits (IC) and the potential improvement of system-level performance for MEMS devices in close proximity to ...
Udit Rawat +2 more
doaj +1 more source
Research-grade CMOS image sensors for remote sensing applications [PDF]
Imaging detectors are key elements for optical instruments and sensors on board space missions dedicated to Earth observation (high resolution imaging, atmosphere spectroscopy...), Solar System exploration (micro cameras, guidance for autonomous vehicle.
Belliot, Pierre +8 more
core +1 more source
As semiconductor process continues to advance, the miniaturization of feature sizes places higher demands on high-failure electro-static discharge (ESD) applications.
Yang Wang +5 more
doaj +1 more source
Low power domino logic circuits in deep-submicron technology using CMOS
Leakage power and propagation delay are the two major challenges in designing CMOS VLSI circuits, in deep sub-micron technology. This paper proposes a novel technique: Foot Driven Stack Transistor Domino Logic (FDSTDL) for designing CMOS domino logic ...
Sandeep Garg, Tarun Kumar Gupta
doaj +1 more source
An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation [PDF]
17/04/13 meb. Accepted version OK to pub.This paper presents an extended model for the CMOS-based Ion-Sensitive-Field-Effect-Transistor (ISFET), incorporating design parameters associated with the physical geometry of the device.
Liu, Y +14 more
core +1 more source
Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation [PDF]
In this paper we present a study of ionizing radiation effects, up to 5 kGy, in several CMOS image sensors manufactured using a commercial 0.18 μm technology dedicated to ...
Goiffon, Vincent +2 more
core
A digital high-dynamic-range CMOS image sensor with multi-integration and pixel readout request [PDF]
A novel principle has been developed to build an ultra wide dynamic range digital CMOS image sensor. Multiple integrations are used to achieve the required dynamic.
Segura, Josep +7 more
core +1 more source
SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology
Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600V lateral SiC power MOSFETs and low-voltage SiC CMOS devices.
Tianshi Liu +9 more
doaj +1 more source

