Results 131 to 140 of about 2,007 (192)

Scaling, Leakage Current Suppression, and Simulation of Carbon Nanotube Field-Effect Transistors. [PDF]

Nanomaterials (Basel)
Gong W, Cai Z, Geng S, Gan Z, Li J, Qiang T, Jiang Y, Cai M.   +7 more
europepmc   +1 more source

Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices. [PDF]

Micromachines (Basel), 2020
Kimbrough J, Williams L, Yuan Q, Xiao Z.
europepmc   +1 more source

Enhanced CPU Design for SDN Controller. [PDF]

Micromachines (Basel)
Bazzi HS, Jaber RA, El-Hajj AM, Hija FA, Haidar AM.   +4 more
europepmc   +1 more source

HSPICE implementation of a numerically efficient model of CNT transistor

This paper presents the algorithms of an implementation of a numerically efficient carbon nanotube transistor (CNT) model in HSPICE. The model is derived from cubic spline non-linear approximation of the non-equilibrium mobile charge density.
Al-Hashimi, Bashir, Kazmierski, Tom, Zhou, Dafeng   +2 more
core  

Design and optimization of a quaternary booth multiplier in quaternary logic using carbon nanotube transistors. [PDF]

Sci Rep
Toosanloo SA, Javidan J.
europepmc   +1 more source

Metal Contact Induced Unconventional Field Effect in Metallic Carbon Nanotubes. [PDF]

Nanomaterials (Basel), 2023
Fedorov G, Hafizi R, Semenenko V, Perebeinos V.   +3 more
europepmc   +1 more source

Efficient 22 nm GNRFET PTLA using low power trimode technique for high speed processor. [PDF]

Sci Rep
Arora S, Tripathi SL, Wijayanto I, Saxena S.   +3 more
europepmc   +1 more source

Buried-Gate MWCNT FET-Based Nanobiosensing Device for Real-Time Detection of CRP. [PDF]

ACS Omega, 2022
Firoozbakhtian A, Rezayan AH, Hajghassem H, Rahimi F, Ghazani MF, Kalantar M, Mohamadsharifi A.   +6 more
europepmc   +1 more source

Large-scale complementary carbon nanotube integrated circuits for harsh radiation environments. [PDF]

Sci Adv
Zhang K, Zhou D, Gao N, Zhang J, Tong Z, Zhao J, Liu P, Wang X, Lin X, Xu H, Peng LM, Zhao W.   +11 more
europepmc   +1 more source

Gate-Induced Static and Dynamic Nonlinearity Characteristics of Bilayer Graphene Field-Effect Transistors (Bi-GFETs). [PDF]

Micromachines (Basel)
Kakar VK, Munindra, Pal PK.
europepmc   +1 more source