Results 131 to 140 of about 331 (175)
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Modelling a CNTFET with Undeposited CNT Defects
2010 IEEE 25th International Symposium on Defect and Fault Tolerance in VLSI Systems, 2010The Carbon NanoTube Field Effect Transistor (CNTFET) is a promising device to supersede the MOSFET at the end of the technology roadmap of CMOS. When designing and manufacturing a CNTFET, additional features such as pitch, number and position of the CNTs must be considered to assess its performance.
Geunho Cho +2 more
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A Compact Noise Model for C-CNTFETs
ECS Journal of Solid State Science and Technology, 2017In this paper we present a compact noise model for C-CNTFETs implemented in Verilog-A. After a brief description of the main noise sources existing in CNTFETs, which constitute a significant limitation in the design of analogue and logic CNTFETs circuits, we enhance a model, already proposed by us, considering the noise sources.
Marani R, Gelao G, Perri AG
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Contact resistance extraction methods for CNTFETs
2015 45th European Solid State Device Research Conference (ESSDERC), 2015Three different methods for the extraction of the contact resistance based on both the well-known transfer length method (TLM) and two variants of the Y-function method have been applied to simulation and experimental data of CNTFETs and the results have been compared.
Anibal Pacheco-Sanchez +3 more
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Basics of CNTFET and Ternary Logic
2020In this chapter, we present key aspects of the CNTFET technology. As indicated earlier, carbon nanotubes have bandgaps that are dependent on the diameter of the tubes [1]. Also, the bandgap turns out to be a measure of the threshold voltage of the CNTFET.
K. Sridharan +2 more
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2020
As the feature size of device has been scaling down for many decades, conventional CMOS technology-based static random access memory (SRAM) has reached its limit due to significant leakage power. Therefore, carbon nanotube field effect transistor (CNTFET) can be considered most suitable alternative for SRAM.
Shashi Bala, Mamta Khosla, Raj Kumar
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As the feature size of device has been scaling down for many decades, conventional CMOS technology-based static random access memory (SRAM) has reached its limit due to significant leakage power. Therefore, carbon nanotube field effect transistor (CNTFET) can be considered most suitable alternative for SRAM.
Shashi Bala, Mamta Khosla, Raj Kumar
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A Review on MOSFET-Like CNTFETs
Science & Technology Journal, 2016Carbon Nanotube Field Effect Transistor (CNTFET) is one of the promising devices for future nanoscale technologies. In this paper, we have studied the drain characteristics of MOSFET-like CNTFETs for different device parameters like, channel length, diameter of CNT, and number of tubes.
Vikash Prasad, Debaprasad Das
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2020
The novel characteristics of CNTFET have eliminated many technological and fundamental hindrances being faced by CMOS transistors. CNTFET is emerging as prospective replacement for CMOS transistors in digital circuits and systems. This chapter introduces design of CNTFET-based basic logic gates.
Gurmohan Singh +2 more
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The novel characteristics of CNTFET have eliminated many technological and fundamental hindrances being faced by CMOS transistors. CNTFET is emerging as prospective replacement for CMOS transistors in digital circuits and systems. This chapter introduces design of CNTFET-based basic logic gates.
Gurmohan Singh +2 more
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Memristor-CNTFET based Ternary Full Adders
2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS), 2020Recently multilevel systems are one of the hottest topics in the digital electronics field. Multi-level logic (MVL) overcomes the issues of interconnections. The ternary system is a promising system where the implementation complexity is low and more information can be stored compared to the binary logic system.
Amr Mohammaden +3 more
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2017
About modelling issues, the research on CNTFETs is still at an early stage. Most of the models available in literature are numerical and make use of self-consistency and therefore they cannot be directly implemented in modelling languages for analog and digital circuits, such as SPICE, Verilog or VHDL-AMS. In this chapter we examine the modelling issue,
PERRI, Anna Gina, MARANI, ROBERTO
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About modelling issues, the research on CNTFETs is still at an early stage. Most of the models available in literature are numerical and make use of self-consistency and therefore they cannot be directly implemented in modelling languages for analog and digital circuits, such as SPICE, Verilog or VHDL-AMS. In this chapter we examine the modelling issue,
PERRI, Anna Gina, MARANI, ROBERTO
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Memristor-CNTFET based Ternary Comparator unit
2018 30th International Conference on Microelectronics (ICM), 2018This paper proposes a new design for ternary logic comparator unit based on memristive threshold logic concept. To provide high-performance design, integrating memristor and Carbon Nano-Tube Field-Effect Transistor, CNTFET, is used. A comparison with other related work is presented to discuss performance aspects.
Nancy S. Soliman +4 more
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