Results 91 to 100 of about 15,156,945 (253)

Physics-Based Compact Model of Independent Dual-Gate BEOL-Transistors for Reliable Capacitorless Memory

open access: yesIEEE Journal of the Electron Devices Society
Capacitorless DRAM architectures based on Back-End-of-Line (BEOL)-transistors are promising for long-retention, high-density and low-power 3D DRAM solutions due to its low leakage, operational flexibility, and monolithic integration capability. Different
Lihua Xu   +5 more
doaj   +1 more source

Alzheimer's Disease Biomarkers Measured by Capillary Blood Collection Versus Venous Plasma and Cerebrospinal Fluid

open access: yesAnnals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective Blood biomarkers are increasingly critical for non‐invasive Alzheimer's Disease (AD) diagnostics and research but typically require on‐site processing. Remote point‐of‐care collection methods could enhance biomarker testing in clinical and research settings.
Sara Ho   +9 more
wiley   +1 more source

A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation

open access: yesIEEE Journal of the Electron Devices Society
A DC model is proposed for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) applicable to various active layer thicknesses. With the back surface potential and its coupling with the front surface potential being considered, an explicit ...
Minxi Cai   +4 more
doaj   +1 more source

A Q‐Learning Algorithm to Solve the Two‐Player Zero‐Sum Game Problem for Nonlinear Systems

open access: yesInternational Journal of Adaptive Control and Signal Processing, Volume 39, Issue 3, Page 566-581, March 2025.
A Q‐learning algorithm to solve the two‐player zero‐sum game problem for nonlinear systems. ABSTRACT This paper deals with the two‐player zero‐sum game problem, which is a bounded L2$$ {L}_2 $$‐gain robust control problem. Finding an analytical solution to the complex Hamilton‐Jacobi‐Issacs (HJI) equation is a challenging task.
Afreen Islam   +2 more
wiley   +1 more source

An Efficient Electrostatic Discharge Analytical Model for a Local Bottom-Gate Carbon Nanotube Field-Effect Transistor

open access: yesElectronic Materials
In the post-Moore era, carbon nanotube field-effect transistors (CNTFETs) are a promising alternative to complementary metal-oxide-semiconductor (CMOS) technology at and below the 5 nm node.
Weiyi Zheng   +7 more
doaj   +1 more source

A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms

open access: yes, 2020
We develop a complete compact model to describe the forward current, reverse current, and capacitance of SiC Schottky barrier diodes. The model is based on the fundamental current mechanisms of thermionic emission and tunneling, and is usable over a ...
Dimitrijev, Sima, Nicholls, Jordan R
core   +1 more source

dynoGP: Deep Gaussian Processes for Dynamic System Identification

open access: yesInternational Journal of Adaptive Control and Signal Processing, EarlyView.
This work introduces a novel class of deep models for system identification, dynamical deep Gaussian processes, which combine the strengths of data‐driven methods, such as those based on neural network architectures, with the ability to output a probability distribution for uncertainty representation.
Alessio Benavoli   +3 more
wiley   +1 more source

Revisiting Stability Criteria in Ball‐Milled High‐Entropy Alloys: Do Hume–Rothery and Thermodynamic Rules Equally Apply?

open access: yesAdvanced Engineering Materials, Volume 27, Issue 6, March 2025.
The stability criteria affecting the formation of high‐entropy alloys, particularly focusing in supersaturated solid solutions produced by mechanical alloying, are analyzed. Criteria based on Hume–Rothery rules are distinguished from those derived from thermodynamic relations. The formers are generally applicable to mechanically alloyed samples.
Javier S. Blázquez   +5 more
wiley   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

open access: yesAdvanced Electronic Materials
The increasing complexity of 3‐dimensional (3D) NAND flash memory necessitates advanced simulation frameworks to predict read behavior, program/erase (P/E) dynamics, and interactions between neighboring cells.
Ilho Myeong, Seonho Shin, Ickhyun Song
doaj   +1 more source

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