Results 1 to 10 of about 171,184 (117)
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs [PDF]
Micromachines, 2021 The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage.
Nicolò Zagni +4 more
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Improved Comprehensive Performance of GaN-Based E-Mode HEMTs with a Thin Al2O3 Interlayer [PDF]
NanomaterialsIn this paper, a 2.5 nm thick Al2O3 interlayer deposited by atomic layer deposition was inserted between AlGaN/GaN HEMT structure and SiNx passivation layer to reduce interface damage of the semiconductor/dielectric introduced directly by plasma-enhanced
Guang Qiao +7 more
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Gravitational Waves from Gravitational Collapse
Living Reviews in Relativity, 2003 Gravitational wave emission from the gravitational collapse of massive stars has been studied for more than three decades. Current state-of-the-art numerical investigations of collapse include those that use progenitors with more realistic angular ...
Chris Fryer
exaly +2 more sources
Transient Analysis of Donor-like Surface Traps in GaN HEMTs [PDF]
AUT Journal of Electrical Engineering, 2022 Charge trapping in Gallium Nitride-based devices affect their reliability and performance. In this paper, we study the dynamics of charge capture and emission in donor-like surface traps, and the impact of trapped charges on transient response of the ...
Amirali Chalechale +2 more
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Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT
Micromachines, 2023 The aim of this paper is to model the effects of threading dislocations on both gate and drain currents of AlGaN/GaN high electron mobility transistors (HEMTs).
Censong Liu +4 more
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An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs
IEEE Access, 2022 Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high power and high frequency applications. However, the existence of damages, defects and dislocations still degrade the device features because of trapping effects.
Ran Ye +6 more
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IEEE Journal of the Electron Devices Society, 2022 We propose a high temperature annealing process in N2 ambience after N2O plasma treatment for AlGaN/GaN HEMT. The annealing process effectively improves the plasma treated surface condition and decreases the current collapse from 41.7% to 10.6 ...
Jingxiong Chen +3 more
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Crystals, 2023 In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure (GFP), and a double floating field plate structure (2FFP) were studied by utilizing SILVACO ATLAS ...
Peiran Wang +9 more
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Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications
Micromachines, 2022 Thanks to high-current densities and cutoff frequencies, short-channel length AlGaN/GaN HEMTs are a promising technology solution for implementing RF power amplifiers in 5G front-end modules. These devices, however, might suffer from current collapse due
Nicolò Zagni +2 more
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Suppression of hot electron effect in AlGaN/GaN HEMT with multi-grooves barrier-etched structure
Materials Research Express, 2023 A multi-grooves barrier-etched structure between barrier layer and passivation layer is proposed in this paper to suppress the hot electron effect at the gate edge on the drain side in the p-GaN gate AlGaN/GaN high-electron-mobility transistor.
Xuanlin Li, Jie Xu, Weijing Liu
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