Results 11 to 20 of about 7,576,978 (246)

Bending Collapse Of Rectangular Section Tubes In Relation To The Bus Roll Over Problem [PDF]

open access: yes, 1979
The thesis is concerned with the theoretical determination of the overall and local effects on the collapse behaviour of bus structures in a roll over situation.
Kecman, DuĊĦan
core   +7 more sources

Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate

open access: yesIEEE Journal of the Electron Devices Society, 2022
This paper investigates bias-dependence of electroluminescence (EL) in an AlGaN/GaN HEMT fabricated on a SiC substrate. The HEMT exhibited a low-intensity reddish EL at the gate electrode at a drain voltage (Vds) of 30 V, which was confirmed with ...
Qiang Ma   +4 more
doaj   +1 more source

Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current Collapse

open access: yesIEEE Journal of the Electron Devices Society, 2021
The dynamic on-resistance increase during power switching is one of the challenges of GaN-based HEMTs (high-electron-mobility transistors) for power electronic applications.
Ji-Xuan Yang   +3 more
doaj   +1 more source

Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs

open access: yesCrystals, 2020
We investigated the effects of GaN buffer resistance of AlGaN/GaN high-electron-mobility transistors (HEMTs) on direct current (DC), low-frequency noise (LFN), and pulsed I-V characterization performances.
Ki-Sik Im   +3 more
doaj   +1 more source

Light effect in photoionization of traps in GaN MESFETs [PDF]

open access: yesPapers in Physics, 2009
Trapping of hot electron behavior by trap centers located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation.
H. Arabshahi, A. Binesh
doaj   +1 more source

Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

open access: yesIEEE Journal of the Electron Devices Society, 2022
Surface traps on GaN-based HEMTs (high-electron-mobility transistors) usually result in the increase of channel on-resistance. It becomes worsen when short pulses are applied during high-frequency and high voltage switching.
Dai-Jie Lin   +3 more
doaj   +1 more source

On the plastic collapse of horizontal saddle supported storage vessels [PDF]

open access: yes, 2003
The present paper summarises a comprehensive programme of work on collapse loads of horizontal cylindrical saddle supported storage vessels. A programme of tests was conducted on 40 model vessels that included both welded and loose saddles.
Tooth, A.S., Spence, J., Nash, D.H.
core   +3 more sources

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

open access: yesMicromachines, 2023
A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted through a comprehensive analysis of material properties and device performance. In this novel epitaxial design, an AlGaN/GaN channel layer was grown directly on the AlN nucleation layer,
Penghao Zhang   +14 more
doaj   +1 more source

A review of progressive collapse research and regulations [PDF]

open access: yes, 2014
History has demonstrated that buildings designed to conventional design codes can lack the robustness necessary to withstand localised damage, partial or even complete collapse. This variable performance has led governmental organisations to seek ways of
Byfield, M.P.   +3 more
core   +1 more source

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

open access: yesMicromachines, 2021
This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system.
Haitao Zhang   +7 more
doaj   +1 more source

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