Results 251 to 260 of about 1,045,435 (276)

Drift Reduction in 2D PtSe2 Piezoresistive Pressure Sensors Through an On‐Chip Wheatstone Bridge

open access: yesAdvanced Electronic Materials, EarlyView.
Drift is a major source of error affecting the accuracy and repeatability of sensors. A Wheatstone bridge (WSB) enables high sensitivity, accuracy, and the elimination of common‐mode drift. We apply the WSB concept to highly sensitive piezoresistive pressure sensors made with two‐dimensional layered platinum diselenide transducers.
Ragini Gupta   +6 more
wiley   +1 more source

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

open access: yesAdvanced Electronic Materials, EarlyView.
This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte   +9 more
wiley   +1 more source

Controllable Superconductivity in Suspended NbSe2

open access: yesAdvanced Electronic Materials, EarlyView.
Suspended NbSe2${\rm NbSe}_2$ provides two complementary routes for controlling superconducting transport. Gate‐driven deformation strains the suspended crystal and tunes its critical temperature and current. Weak thermal anchoring enhances thermal feedback, contributing to multistep hysteresis and negative differential resistance.
Ruihuan Fang   +14 more
wiley   +1 more source

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