Results 91 to 100 of about 1,939 (181)

Planar Compound Eye Lens for Enhanced Light Extraction Efficiency in AlGaN‐Based Deep Ultraviolet LEDs

Advanced Photonics Research
Total internal reflection prevents photons from escaping deep‐ultraviolet (DUV) LED, resulting in serious energy waste and reduced service life.
Qilong Tan, Jie Zhao, Qixin Li, Huan Liu, Bin Dong, Chenguang He, Zhitao Chen, Wen Zhou, Ningyang Liu   +8 more
doaj   +1 more source

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes

Nanoscale Research Letters, 2018
In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated.
Jiamang Che, Chunshuang Chu, Kangkai Tian, Jianquan Kou, Hua Shao, Yonghui Zhang, Wengang Bi, Zi-Hui Zhang   +7 more
doaj   +1 more source

A Miniaturized UV-LED Based Optical Gas Sensor Utilizing Silica Waveguides for the Measurement of Nitrogen Dioxide and Sulphur Dioxide

Proceedings, 2017
Continuing advances in the development of light-emitting diodes (LEDs) in the deep ultraviolet spectral range (DUV) enable miniaturized, mobile, and cost-effective DUV gas sensors.
Philipp Elmlinger, Martin Schreivogel, Simon Weida, Michael Kneissl   +3 more
doaj   +1 more source

Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs

AIP Advances
Aiming to enhance the internal quantum efficiency (IQE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the active region based on the V-shaped quantum well (QW) and the electron-blocking layer (EBL) structure are jointly optimized ...
Jinglei Wang, Huimin Lu, Jianhua Ma, Yifan Zhu, Zihua Zhang, Tongjun Yu, Xuecheng Wei, Hua Yang, Jianping Wang   +8 more
doaj   +1 more source

Implementation of Deep Ultraviolet Raman Spectroscopy [PDF]

, 2011
Denne afhandling, "Implementation of Deep Ultraviolet Raman spectroscopy”, består i hovedsagen af to dele. Deep Ultraviolet – også kaldt DUV – står for bølgelængdeområdet 200 til 300 nm.
Liu, Chuan
core  

Achieving high quality factor interband nanoplasmonics in the deep ultraviolet spectrum via mode hybridization [PDF]

Interband plasmons (IBPs) enable plasmonic behavior in nonmetallic materials, such as semiconductors. Originating from interband electronic transitions, IBPs are characterized by negative real permittivity that can extend into deep ultraviolet (DUV ...
Ruan, Q., Kai, D., Csányi, E., Sugiarto, S., Rusydi, A., Liu, Y., Daqiqeh Rezaei, S., Dong, Z., Leggett, G., Chi, X., Yang, J.K.W., Yit Loong Lee, H., Tjiptoharsono, F.   +12 more
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Predicting Berborite as Potential Deep-Ultraviolet Nonlinear Optical Crystal from First Principles

, 2020
Following our ab initio nonlinear optical (NLO) materials design guidelines, in this Letter, we discovered a novel type of structure to realize potential deep-ultraviolet (DUV) NLO performance in the classical beryllium borate system. By densely stacking
Zheshuai Lin (1483732), Lei Kang (90053), Pifu Gong (1549519), Bing Huang (94373)   +3 more
core   +1 more source

Hundred-meter Gb/s deep ultraviolet wireless communications using AlGaN micro-LEDs [PDF]

, 2022
We demonstrate the use of deep ultraviolet (DUV) micro-light-emitting diodes (LEDs) for long-distance line-of-sight optical wireless communications. With a single 285 nm-emitting micro-LED, we have respectively achieved data rates greater than 6.5 Gb/s ...
Gu, Erdan, McKendry, Jonathan J. D., Chen, Cheng, Xie, Enyuan, Maclure, Daniel M., Hill, Jordan, Haas, Harald, Dawson, Martin D., Herrnsdorf, Johannes   +8 more
core  

Photocurrent dynamics and carrier transport of amorphous-Ga2O3 metal–semiconductor–metal deep ultraviolet photodetectors

This work presents a systematic study in the photocurrent transport and transient dynamics in amorphous Ga2O3-based deep ultraviolet (DUV) photodetectors, which are configured with a co- planar metal–semiconductor–metal structure, with high performances
Yaonan Hou, Lijie Li
core   +1 more source

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Microsystems & Nanoengineering
AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral range (210–280 nm) have demonstrated potential applications in physical sterilization.
Xu Liu, Zhenxing Lv, Zhefu Liao, Yuechang Sun, Ziqi Zhang, Ke Sun, Qianxi Zhou, Bin Tang, Hansong Geng, Shengli Qi, Shengjun Zhou   +10 more
doaj   +1 more source