Results 71 to 80 of about 1,939 (181)

Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors

, 2012
International audienceThe wide bandgap of diamond, along with its extreme semiconductor properties, offers the promising route for deep-ultraviolet (DUV) detection, especially under solar-blind condition and harsh environments.
Sang, Liwen, Meiyong Liao, Liao, Meiyong, Masataka Imura, Teraji, Tokuyuku, Alvarez, José, Tokuyuku Teraji, Yasuo Koide, Liwen Sang, Jose Alvarez, Koide, Yasuo, Imura, Masataka   +11 more
core   +1 more source

The Floor‐Ceiling‐Chip, or 2 × 2D = Pseudo‐3D—Approaching 3D Cell Morphology and Organization between Two Opposing 2D Substrates with Cell‐Adhesive Protein Micropatterns

Advanced Healthcare Materials, Volume 15, Issue 19, 22 May 2026.
Here, we present a novel 3D cell patterning and culture platform. The “Floor‐Ceiling‐Chip” (FC‐Chip) consists of two opposing track‐etched membranes, creating a pseudo‐3D microenvironment for the cells in between. By providing the membranes with micropatterned cell‐adhesive islands of varying geometries and sizes, the FC‐Chip enables control over cell ...
Urandelger Tuvshindorj, Francesca Giacomini, Esra Güben Kaçmaz, Tim ten Brink, Lorenzo Moroni, Zeinab Tahmasebi Birgani, Clemens van Blitterswijk, Pamela Habibović, Stefan Giselbrecht, Jan de Boer, Roman Truckenmüller   +10 more
wiley   +1 more source

Polarity Inversion of Nitride Semiconductors and Application to Deep-Ultraviolet Photonic Devices [PDF]

特集：深紫外発光デバイスの実現に向けた窒化物半導体結晶成長の進展HAYASHI, Yusuke. Polarity Inversion of Nitride Semiconductors and Application to Deep-Ultraviolet Photonic Devices : . 日本結晶成長学会誌 47, 3 (2020); https://doi.org/10.19009/jjacg.47-3-06.III-nitride semiconductors are promising
林, 侑介, Hayashi, Yusuke
core   +1 more source

Enhanced Self‐Phase Modulation in Silicon Nitride Waveguides Integrated With 2D MoS2 Films

Advanced Materials Technologies, Volume 11, Issue 10, 22 May 2026.
ABSTRACT On‐chip integration of 2D materials provides a promising route toward next‐generation integrated optical devices with performance beyond existing limits. Here, significantly enhanced spectral broadening induced by self‐phase modulation (SPM) is experimentally demonstrated in silicon nitride (Si3N4) waveguides integrated with 2D monolayer ...
Shahaz S. Hameed, Di Jin, Aihao Zhao, Jiayang Wu, Junkai Hu, Irfan H. Abidi, Sebastien Cueff, Christian Grillet, Yuning Zhang, Houssein El Dirani, Corrado Sciancalepore, Sebastien Kerdiles, Quentin Wilmart, Sumeet Walia, Christelle Monat, David J. Moss   +15 more
wiley   +1 more source

Optical anisotropy and nonlinearity in deep ultraviolet fluorooxoborates

, 2023
Optical anisotropy and nonlinearity are two tantalizingly important and enticing properties of an optical crystal. Combining these two features will have a miraculous effect.
Bing-Hua Lei (2812339), David J. Singh (535229), Chao Cao (310487)   +2 more
core   +1 more source

Self-powered DUV photodetector harvesting piezoelectric energy in a Ga₂O₃/ZnO nanorod heterojunction

Chemical Engineering Journal Advances
This study demonstrates the fabrication of a self-powered deep-ultraviolet (DUV) photodetector (PD) based on Ga2O3/ZnO heterostructured piezoelectric nanogenerators (PENGs), optimized through controlled thermal annealing.
Kai-Lin Yang, Liang-Wen Ji, Hung-Yeu Chen, Yu-Jen Hsiao, Siang-Ning Tseng, Zih-Han Lin   +5 more
doaj   +1 more source

High-Performance and Self-Powered Deep UV Photodetectors Based on High Quality 2D Boron Nitride Nanosheets

Nanomaterials, 2017
High-quality two-dimensional (2D) crystalline boron nitride nanosheets (BNNSs) were grown on silicon wafers by using pulsed plasma beam deposition techniques.
Ali Aldalbahi, Manuel Rivera, Mostafizur Rahaman, Andrew F. Zhou, Waleed Mohammed Alzuraiqi, Peter Feng   +5 more
doaj   +1 more source

Domain engineered gallium oxide phototransistors enabling intelligent ultraviolet vision with dynamic gating

InfoMat, Volume 8, Issue 5, May 2026.
Single‐domain Si‐doped β‐Ga2O3 thin films grown on off‐axis sapphire eliminate domain boundaries, improving transport and photogating. Gate‐pulse modulation suppresses persistent photoconductivity, yielding ultrafast response and high detectivity. Integrated into a 24 × 24 array, the devices enable high frame rate DUV imaging and energy‐efficient ...
Jae Young Kim, Byungsoo Kim, Hee A Kim, Gi Baek Nam, Hyuk Jin Kim, Yoon Jung Lee, Seung Ju Kim, Suin Yi, Yongjo Park, Ho Won Jang   +9 more
wiley   +1 more source

Deep Learning Classification of Deep Ultraviolet Fluorescence Images for Margin Assessment During Breast Cancer Surgery

, 2023
Breast-conserving surgery (BCS) is a widely used treatment for breast cancer, but ensuring the complete removal of cancer cells from the surgical margins remains a challenge.
To, Tyrell
core  

Monolithic Integration of ScAlN Modulators on Silicon‐On‐Insulator Platform

Laser &Photonics Reviews, Volume 20, Issue 9, 6 May 2026.
Monolithic integration of scandium‐doped aluminum nitride (ScAlN) modulators on a silicon‐on‐insulator platform is reported. A multilayer electrode design enhances RF‐optical field overlap, enabling direct access to the diagonal electro‐optic coefficient and improved modulation efficiency.
Sihao Wang, Bo Li, Lin Zhou, Victor Leong, Nanxi Li, Xianshu Luo, Di Zhu   +6 more
wiley   +1 more source