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Remote Deep-Ultraviolet Laser Ablation in Connection with Electrospray Ionization-Atmospheric Pressure Chemical Ionization (rDUVLAESCI): A Novel Dual Ionization Source for Molecular Mass Spectrometry. [PDF]
Papoušková B +4 more
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Self-Powered Photodetectors with Ultra-Broad Spectral Response and Thermal Stability for Broadband, Energy Efficient Wearable Sensing and Optoelectronics. [PDF]
Feng PX +8 more
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ChemistrySelect, 2021
Abstract Nonlinear optical (NLO) materials with high second‐order nonlinearity are the need of the hour, as they play a key role in frequency conversion, so that coherent radiation in the Ultraviolet (UV) and Deep UV (DUV) (absorption edge<200 nm) region can be achieved.
Anand Sekar +2 more
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Abstract Nonlinear optical (NLO) materials with high second‐order nonlinearity are the need of the hour, as they play a key role in frequency conversion, so that coherent radiation in the Ultraviolet (UV) and Deep UV (DUV) (absorption edge<200 nm) region can be achieved.
Anand Sekar +2 more
openaire +1 more source
Portable Deep-Ultraviolet (DUV) Raman for Standoff Detection
Applied Spectroscopy, 2016Alakai Defense Systems has recently developed a man-portable ultraviolet Raman spectrometer system. The portable Raman improvised explosives detector was designed to provide rapid, standoff detection of chemicals of interest to the end user, including, but not limited to explosives, narcotics, toxic industrial chemicals, and toxic industrial materials.
Adam J, Hopkins +3 more
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Characterization of 248nm Deep Ultraviolet (DUV) Photoresist after Ion Implantation
ECS Transactions, 2009The elemental and structural changes of 248nm DUV photoresist induced by arsenic implantation with high dose and different acceleration energies were studied. For this purpose different analytical techniques were combined. An investigation of the capabilities of the Micro Raman Spectroscopy for analysis of ion implanted photoresist (II-PR) revealed ...
Diana Tsvetanova +9 more
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ToF–SIMS and XPS study of ion implanted 248nm deep ultraviolet (DUV) photoresist
Microelectronic Engineering, 2011Arsenic implanted 248nm DUV photoresist films were characterized by ToF-SIMS and XPS analysis methods. The effect of the implant dose and energy on the formation of the crust layer on top of the bulk photoresist was studied. The crust layer thickness was found to be dependent on the implant energy and dose. The elemental and chemical changes induced by
A. Franquet +7 more
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CLEO: 2013, 2013
Low-irradiance, long-term UV treatment using DUV-LEDs extended the cold storage shelf life of strawberries up to 2-fold as based on weight, moisture content, anthocyanin concentration, soluble solids, titratable acidity, visible damage, and mold growth.
Steven Britz +5 more
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Low-irradiance, long-term UV treatment using DUV-LEDs extended the cold storage shelf life of strawberries up to 2-fold as based on weight, moisture content, anthocyanin concentration, soluble solids, titratable acidity, visible damage, and mold growth.
Steven Britz +5 more
openaire +1 more source
SPIE Proceedings, 2004
Airborne molecular contamination (AMC) in the form of bases, acids and condensable organic and inorganic substances threaten both costly and sensitive optics and mask pattern formation in the chemically amplified resists (CAR) used for both E-beam and laser lithography.
Mats Ekberg +8 more
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Airborne molecular contamination (AMC) in the form of bases, acids and condensable organic and inorganic substances threaten both costly and sensitive optics and mask pattern formation in the chemically amplified resists (CAR) used for both E-beam and laser lithography.
Mats Ekberg +8 more
openaire +1 more source
SPIE Proceedings, 2016
AlGaN-based LEDs are expected to be useful for sterilization, deodorization, photochemical applications such as UV curing and UV printing, medical applications such as phototherapy, and sensing. Today, it has become clear that efficient AlGaN-based LED dies are producible between 355 and 250 nm with an external quantum efficiency (EQE) of 3% on flat ...
Akira Hirano +6 more
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AlGaN-based LEDs are expected to be useful for sterilization, deodorization, photochemical applications such as UV curing and UV printing, medical applications such as phototherapy, and sensing. Today, it has become clear that efficient AlGaN-based LED dies are producible between 355 and 250 nm with an external quantum efficiency (EQE) of 3% on flat ...
Akira Hirano +6 more
openaire +1 more source
Optics Letters, 2017
We report a 10 kHz, 10.5 W deep ultraviolet (DUV) laser at 258 nm with a pulse duration of 3 ns by fourth-harmonic generation (FHG) in a CsLiB6O10 crystal with high-conversion efficiency. The fundamental laser is at 1030 nm with 35 W output power consisting of a Yb:YAG ceramics thin rod amplifier. The M2 of the DUV laser was confirmed to be
Hongwen, Xuan +3 more
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We report a 10 kHz, 10.5 W deep ultraviolet (DUV) laser at 258 nm with a pulse duration of 3 ns by fourth-harmonic generation (FHG) in a CsLiB6O10 crystal with high-conversion efficiency. The fundamental laser is at 1030 nm with 35 W output power consisting of a Yb:YAG ceramics thin rod amplifier. The M2 of the DUV laser was confirmed to be
Hongwen, Xuan +3 more
openaire +2 more sources

