Results 271 to 280 of about 20,723,044 (331)
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Journal of Electronic Materials, 1990
The physics governing deep levels in superlattices and quantum wells is elucidated, with emphasis on the importance of shallow-deep transitions caused by a band edge passing through a deep level, and the accompanying change in doping character of the impurity.
John D. Dow +4 more
openaire +1 more source
The physics governing deep levels in superlattices and quantum wells is elucidated, with emphasis on the importance of shallow-deep transitions caused by a band edge passing through a deep level, and the accompanying change in doping character of the impurity.
John D. Dow +4 more
openaire +1 more source
DeepLineDP: Towards a Deep Learning Approach for Line-Level Defect Prediction
IEEE Transactions on Software Engineering, 2023Defect prediction is proposed to assist practitioners effectively prioritize limited Software Quality Assurance (SQA) resources on the most risky files that are likely to have post-release software defects.
Chanathip Pornprasit +1 more
semanticscholar +1 more source
Deep Level Transient Spectroscopy
2003This chapter is from the book Encyclopedia of Materials: Science and Technology.
Look, David C., Fang, Zhaoqiang
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Geometric deep learning on molecular representations
Nature Machine Intelligence, 2021Geometric deep learning (GDL) is based on neural network architectures that incorporate and process symmetry information. GDL bears promise for molecular modelling applications that rely on molecular representations with different symmetry properties and
Kenneth Atz, F. Grisoni, G. Schneider
semanticscholar +1 more source
Highly Accurate Machine Fault Diagnosis Using Deep Transfer Learning
IEEE Transactions on Industrial Informatics, 2019We develop a novel deep learning framework to achieve highly accurate machine fault diagnosis using transfer learning to enable and accelerate the training of deep neural network. Compared with existing methods, the proposed method is faster to train and
Siyu Shao +3 more
semanticscholar +1 more source
MRS Proceedings, 1989
AbstractThe physics of deep levels in semiconductors is reviewed, with emphasis on the fact that all substitutional impurities produce deep levels - some of which may not lie within the fundamental band gap. The character of a dopant changes when one of the deep levels moves into or out of the fundamental gap in response to a perturbation such as ...
John D. Dow +3 more
openaire +1 more source
AbstractThe physics of deep levels in semiconductors is reviewed, with emphasis on the fact that all substitutional impurities produce deep levels - some of which may not lie within the fundamental band gap. The character of a dopant changes when one of the deep levels moves into or out of the fundamental gap in response to a perturbation such as ...
John D. Dow +3 more
openaire +1 more source
Deep Learning Based Deep Level Tagger for Malayalam
Recent Advances in Computer Science and Communications, 2021Background: POS tagging is the process of identifying the correct grammatical category of words based on its meaning and context in a text document. It is one of the preliminary steps in the processing of natural language text. If any error happens in POS tagging the same will be propagated to whole NLP applications.
Ajees A. P., Sumam M. Idicula
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2018 IEEE/CVF Conference on Computer Vision and Pattern Recognition, 2017
Visual recognition requires rich representations that span levels from low to high, scales from small to large, and resolutions from fine to coarse.
F. Yu, Dequan Wang, Trevor Darrell
semanticscholar +1 more source
Visual recognition requires rich representations that span levels from low to high, scales from small to large, and resolutions from fine to coarse.
F. Yu, Dequan Wang, Trevor Darrell
semanticscholar +1 more source
Journal of Applied Physics, 1973
Change of the junction capacitance under the illumination of monochromatic radiation has been observed in GaP n+p junctions. The peaks were observed at 1.8 and 2.4 eV at 77°K. The 1.8 eV peak was attributed to the hole activation from Fe3+ to the valence band.
Yasuo Okuno +2 more
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Change of the junction capacitance under the illumination of monochromatic radiation has been observed in GaP n+p junctions. The peaks were observed at 1.8 and 2.4 eV at 77°K. The 1.8 eV peak was attributed to the hole activation from Fe3+ to the valence band.
Yasuo Okuno +2 more
openaire +1 more source
Journal of Crystal Growth, 1988
Abstract We have used a variety of complementary techniques to study electronic trapping levels that are far from either band edge in CdTe. These deep levels play an important role in determining the electrical properties of the material. We have studied and attempted to identify levels due to specific defects and those due to either intentional or ...
R.E. Kremer, W.B. Leigh
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Abstract We have used a variety of complementary techniques to study electronic trapping levels that are far from either band edge in CdTe. These deep levels play an important role in determining the electrical properties of the material. We have studied and attempted to identify levels due to specific defects and those due to either intentional or ...
R.E. Kremer, W.B. Leigh
openaire +1 more source