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Deep-ultraviolet contact photolithography
Microelectronic Engineering, 2000The patterning of 100 nm features via contact photolithography is described. Details of a conformable embedded-amplitude mask and pattern transfer into a tri-layer resist with this mask are presented. In-plane pattern-placement errors for this lithographic process have been measured to be less than 60 nm.
James G. Goodberlet, Bryan L. Dunn
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Applying deep ultraviolet lithography
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1990This paper discusses the application of a deep wafer stepper and associated photoresist systems to advanced semiconductor processing. It is shown that, even with the limited number of photoresists available, deep UV lithography is a viable candidate for advanced processes requiring half micron and smaller features.
Mike Tipton +3 more
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EDFA Technical Articles, 2001
Abstract This is the second article in a two-part series on deep ultraviolet (DUV) microscopy. The first part, published in the February 2000 issue of EDFA, discusses the working principles and capabilities of the method and the types of applications for which it is suited.
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Abstract This is the second article in a two-part series on deep ultraviolet (DUV) microscopy. The first part, published in the February 2000 issue of EDFA, discusses the working principles and capabilities of the method and the types of applications for which it is suited.
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Mode-locked deep ultraviolet Ce:LiCAF laser
Optics Letters, 2009We report mode-locked operation of a synchronously pumped Ce:LiCAF oscillator. The laser operated in the deep UV with output radiation centered at 291 nm and a pulse duration of 6 ps. The maximum output power measured was 52 mW, with 13% slope efficiency. The Ce:LiCAF crystal has a gain bandwidth capable of supporting few-femtosecond pulses, and so our
Eduardo, Granados +2 more
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Deep Ultraviolet Plasmon Resonance in Aluminum Nanoparticle Arrays
ACS Nano, 2013Small aluminum nanoparticles have the potential to exhibit localized surface plasmon resonances in the deep ultraviolet region of the electromagnetic spectrum, however technical and scientific challenges make it difficult to attain this limit. We report the fabrication of arrays of Al/Al2O3 core/shell nanoparticles with a metallic-core diameter between
Maidecchi +10 more
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Applied Surface Science, 2019
Abstract A single-crystalline ZnGa2O4 epilayer was successfully grown on a c-plane (0001) sapphire substrate through metalorganic chemical vapor deposition. A metal-semiconductor-metal Schottky deep-ultraviolet (DUV) photodetector based on a ZnGa2O4 thin film was fabricated through a simple process of E-gun evaporation and thermal annealing.
Si-Han Tsai +3 more
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Abstract A single-crystalline ZnGa2O4 epilayer was successfully grown on a c-plane (0001) sapphire substrate through metalorganic chemical vapor deposition. A metal-semiconductor-metal Schottky deep-ultraviolet (DUV) photodetector based on a ZnGa2O4 thin film was fabricated through a simple process of E-gun evaporation and thermal annealing.
Si-Han Tsai +3 more
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Deep Ultraviolet Smith-Purcell Radiation
Conference on Lasers and Electro-Optics, 2018We demonstrated high order Smith-Purcell radiation in deep ultraviolet wavelength region. Having free electrons passing through a slot in a 2μm-long two-dimensional Aluminum grating, the radiation with wavelength as short as 237nm has been derived.
Yu Ye +3 more
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Spectral broadening and pulse shaping in the deep ultraviolet
Optics LettersWe report the generation and shaping of ∼20 femtosecond pulses in the deep ultraviolet (DUV). Our approach combines spectral broadening in a stretched hollow-core fiber with compression and shaping via an acousto-optic modulator-based pulse shaper.
Julia Codere +7 more
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Deep-ultraviolet scatterometry for nanoparticle detection
SPIE Proceedings, 2000The detection of surface particles is an important part of contamination control in semiconductor manufacturing. However, the minimum particle size required to be detected has been becoming smaller as integrated-circuit geometries shrink. Current visible-light detection systems can detect particles down to around 50 nm in polystyrene-latex-equivalent ...
Benjamin D. Buckner, E. Dan Hirleman
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Far- and Deep-Ultraviolet Spectroscopy
2015This book is the first comprehensive work to be published on far-ultraviolet (FUV) and deep-ultraviolet (DUV) spectroscopy,subjects of keen interest because new areas of spectroscopy have been born in the FUV and DUV regions. For example, FUV spectroscopy in condensed matterhas become possible due to the development of attenuated total reflection/FUV ...
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