Results 161 to 170 of about 709 (218)
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Identification and Passivation of Defects in Self-Assembled Monolayers
Langmuir, 2009We demonstrate imaging of nanoscale defects in self-assembled monolayers (SAMs). Atomic layer deposition of aluminum oxide (AlO(x)) onto hydrophobic SAMs is followed by imaging using scanning electron microscopy (SEM). The insulating AlO(x) selectively deposits onto the exposed substrate at defect sites and becomes charged during imaging, providing ...
Michael J, Preiner, Nicholas A, Melosh
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Efficient defect passivation by hot-wire hydrogenation
Applied Physics Letters, 1997Atomic hydrogen, produced at a hot wire, passivates bulk defects in polycrystalline silicon without damaging surface regions. Solar cells from such polycrystalline silicon respond much more favorably to hot-wire hydrogenation than to low-energy ion implantation or a direct-current plasma treatment.
Plieninger, R. +3 more
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Effect of Passivation and Passivation Defects on Electromigration Failure in Aluminum Metallization
22nd International Reliability Physics Symposium, 1984Metal line structures with intentional defects in the passivation, to simulate cracks or pin holes, were used in electromigration studies. Results show that the stress changes in the metallization caused by these defects are not as important as the restraining action of the passivation in affecting a metallization's resistance to electromigration ...
Harry A. Schafft +4 more
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Hydrogen in silicon: diffusion and defect passivation
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991, 2002Results of studies on hydrogen diffusion and the passivation of crystal defects and impurities in single and polycrystalline silicon obtained from several different vendors are discussed. It is shown that enhanced diffusion of hydrogen can occur in some of these materials, both in the bulk and along grain boundaries, with an effective diffusivity of ...
B.L. Sopori +7 more
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Passivation of Surface and Bulk Defects in InP
MRS Proceedings, 1992ABSTRACTThe effect of sulfur and hydrogen plasma treatment on the Schottky barrier and photoluminescence (PL) properties of p-InP is reported. Both the treatments increase the barrier height of Au/p-InP diodes and band to band PL. This is explained as being due to a shift in the surface fermi level position towards the P vacancy related pinning level ...
Sathya Balasubramanian +3 more
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Hydrogen passivation of point defects in silicon
Applied Physics Letters, 1980Laser melting of crystalline silicon introduces electrically active defects which are observed by capacitance transient spectroscopy. The electrical activity of these point defects is neutralized by reaction with atomic hydrogen at 200 °C.
J. L. Benton +5 more
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Passivation of oxidation induced defects in silicon
Applied Physics Letters, 1995The effects on minority carrier diffusion length and surface recombination velocity of the oxidation of p-type silicon in a copper contaminated ambient have been analyzed using electron beam induced current. The experiments were carried out on Czochralski and float-zone silicon in order to obtain two different microstructures of defects and copper ...
A. Correia +2 more
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On the transport of point defects in passive films
Electrochimica Acta, 1998Abstract Based on phenomenological equations and atomistic diffusion theory, general equations have been derived for vacancy diffusion in solids. The normally used diffusion equations are found to be special forms of the general equations under the assumption of low vacancy concentration or homogenous vacancy distribution.
Lei Zhang, Digby D. Macdonald
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New passive defect detection technique
Australian Journal of Mechanical Engineering, 2008Detecting localised damage, such as small cracks in many structural components, is still a difficult problem in the field of structural health monitoring (SHM). A number of techniques have been developed in the past two decades for on-line detection and assessment of damage in various structures.
Wildy, S., Kotousov, A., Codrington, J.
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The role of nitrogen in HfSiON defect passivation
2009 IEEE International Reliability Physics Symposium, 2009In this work we examine the effect of nitrogen incorporation on the defect generation behavior in HfSiON gate dielectric layers. We show that nitrogen effectively passivates pre-existing defects in the HfSiO, but the effect is quickly reversed during stress leading to high levels of SILC and ...
R. O'Connor +6 more
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