Results 171 to 180 of about 709 (218)
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Recent achievements in semiconductor defect passivation
Materials Science and Engineering: B, 1997Abstract The full understanding of processes occurring during impurities and defect passivation is of both practical and theoretical interest. The first topic considered in the present paper is the study of a new passivation methodology, based on the use of catalytic hydrogenation.
Sergio Pizzini +4 more
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Passive euthanasia of defective newborn infants: Legal considerations
The Journal of Pediatrics, 1976The recent increase in reporting of passive euthanasia of defective newborn infants has not been accompanied by extensive analysis of the legality of the practice or the appropriateness of current law. There appears to be criminal liability on several grounds for parents, physicians, nurses, and administrators.
J A, Robertson, N, Fost
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Defective temporal discrimination of passive movements in Parkinson's disease
Neuroscience Letters, 2007Perception of limb position and motion is abnormal in Parkinson's disease (PD). Despite the fact that the processing of proprioceptive inputs is inherently temporal, most studies have assessed spatial aspects of proprioception in PD patients. Here, we use a recently described method to test whether deficits also exist in temporal discrimination of ...
FIORIO, Mirta +6 more
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Complete Corrosion Inhibition through Graphene Defect Passivation
ACS Nano, 2013Graphene is expected to enable superior corrosion protection due to its impermeability and chemical inertness. Previous reports, however, demonstrate limited corrosion inhibition and even corrosion enhancement of graphene on metal surfaces. To enable the reliable and complete passivation, the origin of the low inhibition efficiency of graphene was ...
Ya-Ping, Hsieh +8 more
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ACS Applied Materials & Interfaces, 2019
Unavoidable defects in grain boundaries (GBs) are detrimental and critically influence the organometal halide perovskite performance and stability. To address this issue, semiconducting molecules have been employed to passivate traps along perovskite GBs.
Zhen Wang +9 more
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Unavoidable defects in grain boundaries (GBs) are detrimental and critically influence the organometal halide perovskite performance and stability. To address this issue, semiconducting molecules have been employed to passivate traps along perovskite GBs.
Zhen Wang +9 more
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Defect passivation by hydrogen in III–V semiconductorepitaxial films
Thin Solid Films, 1990Abstract We discuss the basic role of hydrogen in passivating all kinds of defects (deep and shallow) in epitaxial GaAs and other III–V compounds and alloys. After a short review of known results in the literature, we present recent advances in our laboratory, where efficient passivation of non-radiative recombination centres is achieved by hydrogen ...
FROVA, Andrea, CAPIZZI, Mario
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Defect Passivation and Photoconduction in Sputtered a-Ge:H
1985Studies of reactively sputtered a-Ge:H show that the dangling bond density measured by optical absorption and electron spin resonance decreases exponentially with increasing hydrogen partial pressure. The magnitude of steady-state photoconductivity is inversely related to defect density in materials deposited or annealed above 350K, indicating that ...
P. D. Persans +2 more
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Quantitative Defect Characterization for Passive Thermography Application
Research in Nondestructive Evaluation, 2015This article proposes a new method for characterizing subsurface defects in high temperature wall by means of passive thermography. The method enables a fast and reliable quantitative defect characterization. Ten informative parameters have been proposed for this purpose based on temperature behavior on the outer surface wall of a petrochemical boiler.
Heriansyah, Rudi +2 more
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The Point Defect Model for the Passive State
Journal of The Electrochemical Society, 1992In this paper a review is presented of the point defect model (PDM) for the growth and breakdown of passive films on metal and alloy surfaces in contact with aqueous solutions. The model provides a reasonable account of the steady-state properties of cation-conducting and anion-conducting barrier layers on nickel and tungsten, respectively, in ...
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Hydrogen Passivation of Luminescence-Quenching Defects in SiNanocrystals
Journal of the Korean Physical Society, 2008Si nanocrystals embedded in silicon-dioxide lms are exposed to either atomic or molecular hydrogen at 300 C. Both exposures are shown to result in an increase in the photoluminescence (PL) intensity with increasing exposure time, followed by saturation.
Yoon-Jin Jung, Jong-Hwan Yoon
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