Results 171 to 180 of about 18,004 (298)

Flexible Direct‐Conversion X‐Ray Detectors: From Emerging Materials to Conformal Imaging

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
This comprehensive review analyzed the performance, challenges, and future directions of four emerging material systems for next‐generation flexible direct‐conversion X‐ray detectors: organic semiconductors, perovskites, metal–organic frameworks, and inorganic metal compounds.
Haipeng Di, Guoliang Ma, Jiaxin Mu, Kailian Dong, Haibin Li, Manjing Wang, Xin Song, Haojin Li, Jianwei Xu, Yiying Zhao, Jingjing Zhao, Guojia Fang   +11 more
wiley   +1 more source

Participation in the "nutrition at the Centre" project through women's group improved exclusive breastfeeding practices, as measured by the deuterium oxide dose-to-mother technique. [PDF]

Int Breastfeed J, 2020
Lokonon JHF, Hounkpatin WA, Idohou-Dossou N.   +2 more
europepmc   +1 more source

Deuterium trapping in sintered polished UO2 disks

, 2005
In this work we present deuterium analysis performed using the H-2(He-3, alpha)H-1 Nuclear Reaction Analysis method. Different sets of sintered polished uranium oxide disks have been investigated before and after annealing at 400 degrees C in ArD2 ...
Sauvage, T., Miserque, F., Labrim, H., Piron, J.P., Desgardin, P., Blondiaux, G., Barthe, M.F., Corbel, C.   +7 more
core  

From Phosphinimines to Four‐Membered SiCPN Cations: Insights Into N–Si Bonding and Ring Strain

European Journal of Inorganic Chemistry, EarlyView.
Sterically tuned N‐silyl phosphinimines enable four‐membered SiCPN cations. Hydride abstraction yields cyclic cations for Me and iPr substituents at silicon, while tBu gives a protonated intermediate. Multinuclear NMR spectroscopy, X‐ray crystallography, thermochemical density functional theory investigations, and natural bond orbital analyses reveal ...
Alexander Falk, Jonathan O. Bauer
wiley   +1 more source

Quantification and Localisation of New Brain Lipid Synthesis Using Deuterium Oxide and High Resolution Mass Spectrometry. [PDF]

Angew Chem Int Ed Engl
Zhang C, Michael JA, Teo JD, Song H, Westerhausen MT, Mutuku SM, Ellis SR, Don AS.   +7 more
europepmc   +1 more source

Oxygen annealing for deuterium doped indium tin oxide thin films

Deuterium-doped indium tin oxide films, fabricated by dc plasma deposition in sputter gas consisting of deuterium and argon, were annealed at 300 °C for 40 min in flowing oxygen gas by using tubular gold image furnace.
Ishii, Satoshi, コヒキ, シゲミ, Shoji, Fumiya, Sekiba, Daiichiro, Kohiki, Shigemi, Kohno, Atsushi, 古曵, 重美, Mitome, Masanori, Luo, Suning, Okada, Koichi, Tajiri, Takayuki   +10 more
core  

Iminodirhodium‐ and Iminocopper‐Catalyzed CH Activation: Chemoselective Oxidation of Alcohols and Aldehydes via Intermolecular Hydride Abstraction

European Journal of Organic Chemistry, EarlyView.
Chemoselective hydride abstractor iminometalloids, derived from O‐mesylacetoxime (MAO) using Rh2(II/II) or Cu(I) catalysts, can activate the C–Hα bonds of alcohols and aldehydes ultimately forming ketones, carboxylic acids, and esters even in the presence of C–H bonds with comparable bond strengths.
Raghunath Reddy Anugu, John R. Falck, Adeniyi M. Adebesin   +2 more
wiley   +1 more source

Deuterium-oxide-assisted stimulated Raman scattering microscopy: metabolic imaging for precision medicine. [PDF]

Biophotonics Discov
Li Y, Yue S.
europepmc   +1 more source

Pt/C‐Catalyzed Deuteration of Polycyclic Aromatic Hydrocarbons with Suppressed Arene Hydrogenation

European Journal of Organic Chemistry, EarlyView.
An additive‐enabled Pt/C protocol promotes hydrogen–deuterium exchange in fused polycyclic aromatic hydrocarbons (PAHs) in D2O/2‐PrOH at 80 °C. Decalin suppresses undesired ring hydrogenation while accelerating on‐ring H–D exchange, furnishing highly deuterated PAHs (PAHs‐dn).
Naoya Sakurada, Sae Tomoto, Naoki Oka, Tomohiro Ichikawa, Takashi Shigeta, Hironao Sajiki, Takashi Ikawa   +6 more
wiley   +1 more source

Annealing effect on reliabilty of SiO2 for deuterium implanted silicon

, 2006
Deuterium implantation in silicon substrate before the growth of gate oxide leads to enhanced interface passivation. This work studies the reliability of the gate oxide when the wafers were subjected to further annealing conditions at 600°C and 700°C ...
Misra, D., Kundu, T.
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