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Lead-Free FACsSnI3 Based Perovskite Solar Cell: Designing Hole and Electron Transport Layer
Nanomaterials, 2023 In recent years, lead-based perovskites solar cells have demonstrated excellent power-conversion efficiency. Despite their remarkable progress, the commercialization of lead-based perovskites is hampered by lead toxicity concerns. The recently discovered
Syed Abdul Moiz +2 more
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Nanomaterials, 2022 Lead halide perovskites are the most promising compared to the other recently discovered photovoltaic materials, but despite their enormous potential, these materials are facing some serious concerns regarding lead-based toxicity.
Syed Abdul Moiz +2 more
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Photonics, 2021 The methylammonium lead halide solar cell has attracted a great deal of attention due to its lightweight, low cost, and simple fabrication and processing.
Syed Abdul Moiz
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Analysis of static behavior of ion sensitive field effect Transistor for pH measurements [PDF]
Bulletin of Natural Sciences Research, 2022 The Ion-Sensitive Field-Effect Transistor (ISFET) is one of the most popular pH sensors traditionally using to measure hydrogen ion concentration (pH) of the electrolytic solutions.
Kevkić Tijana +4 more
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Heterostructure Ge-Body pTFETs for Analog/RF Applications
IEEE Journal of the Electron Devices Society, 2020 This article presents a systematic study on the analog and radio-frequency (RF) performance of type-II staggered heterostructure p-channel tunnel field-effect transistors (pTFETs) with Ge (Germanium) channel and different compound semiconductor source ...
Sayani Ghosh +3 more
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IEEE Journal of the Electron Devices Society, 2014 This paper presents a systematic study of the effect of source/drain (S/D) implant lateral straggle on the RF performance of the symmetric and asymmetric underlap double gate (UDG) MOSFET devices.
Kalyan Koley +3 more
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IEEE Journal of the Electron Devices Society, 2015 This paper presents the results of a systematic theoretical investigation on the impact of gate height on the analog and radio-frequency (RF) performances of underlap-FinFET devices.
Sayani Ghosh +3 more
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Physical modeling of HZO-based ferroelectric field-effect transistors with a WOx channel
Frontiers in Nanotechnology, 2022 The quasistatic and transient transfer characteristics of Hf0.57Zr0.43O2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with a WOx channel are investigated using a 2-D time-dependent Ginzburg-Landau model as implemented in a state-of-the-art
Xin Wen +4 more
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Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides
IEEE Journal of the Electron Devices Society, 2022 This study examined the temperature-related piezoresistance issues of p-type doped 3C-silicon carbide (3C-SiC) materials. Previously, we proposed piezoresistance temperature models that describe phenomena based on the ionization energies of materials ...
Takaya Sugiura +4 more
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IEEE Journal of the Electron Devices Society, 2022 In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because ...
Eun-Kyeong Jang +4 more
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