Results 21 to 30 of about 4,228,415 (299)
Large-signal device simulation in time- and frequency-domain: a comparison [PDF]
The aim of this paper is to compare the most common time- and frequency-domain numerical techniques for the determination of the steady-state solution in the physics-based simulation of a semiconductor device driven by a time-periodic generator.
Bonani, Fabrizio +7 more
core +1 more source
This paper presents the results of a systematic theoretical investigation on the impact of gate height on the analog and radio-frequency (RF) performances of underlap-FinFET devices.
Sayani Ghosh +3 more
doaj +1 more source
Physical modeling of HZO-based ferroelectric field-effect transistors with a WOx channel
The quasistatic and transient transfer characteristics of Hf0.57Zr0.43O2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with a WOx channel are investigated using a 2-D time-dependent Ginzburg-Landau model as implemented in a state-of-the-art
Xin Wen +4 more
doaj +1 more source
Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides
This study examined the temperature-related piezoresistance issues of p-type doped 3C-silicon carbide (3C-SiC) materials. Previously, we proposed piezoresistance temperature models that describe phenomena based on the ionization energies of materials ...
Takaya Sugiura +4 more
doaj +1 more source
In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because ...
Eun-Kyeong Jang +4 more
doaj +1 more source
A Comparative Study of High-Efficiency Lead-Free Cs3Bi2X9 (X = Cl, Br, I)-Based Solar Cells
Lead halide-based perovskite solar cells have gained significant attention from academia and the photovoltaic industry due to their exceptional optical and electrical characteristics.
Mahdi Alzubaidi +3 more
doaj +1 more source
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed.
Jee-Hun Jeong, Ogyun Seok, Ho-Jun Lee
doaj +1 more source
Organic Bioelectronics: Diversity of Electronics Along with Biosciences
This review article provides an introductory overview of organic bioelectronics, focusing on the creation of electrical devices that use specialized carbon-based semiconducting materials to interact successfully with biological processes.
Syed Abdul Moiz +2 more
doaj +1 more source
Standard CMOS Process Integrated Silicon-Based Ultraviolet-Infrared Complementary Sensor
This study proposes a new ultraviolet-infrared (UV-Ir) compatible sensor fabricated using the standard CMOS process. The concept is verified through a numerical simulation, wherein the standard CMOS process parameters used are evaluated.
Takaya Sugiura +2 more
doaj +1 more source
Optimizing Cu+ Perovskite Chlorides for 24% Efficiency
Lead-free perovskite solar cells are promising as sustainable photovoltaics, but most of the copper-based alternatives are inefficient and unstable. The copper(I) perovskite chlorides (CuMCl3, M = Fe, Cr, Zn) are optimized by tuning the thickness and ...
Syed Abdul Moiz +2 more
doaj +1 more source

