Results 21 to 30 of about 4,228,415 (299)

Large-signal device simulation in time- and frequency-domain: a comparison [PDF]

open access: yes, 2008
The aim of this paper is to compare the most common time- and frequency-domain numerical techniques for the determination of the steady-state solution in the physics-based simulation of a semiconductor device driven by a time-periodic generator.
Bonani, Fabrizio   +7 more
core   +1 more source

Influence of the Gate Height Engineering on the Intrinsic Parameters of UDG-MOSFETs With Nonquasi Static Effect

open access: yesIEEE Journal of the Electron Devices Society, 2015
This paper presents the results of a systematic theoretical investigation on the impact of gate height on the analog and radio-frequency (RF) performances of underlap-FinFET devices.
Sayani Ghosh   +3 more
doaj   +1 more source

Physical modeling of HZO-based ferroelectric field-effect transistors with a WOx channel

open access: yesFrontiers in Nanotechnology, 2022
The quasistatic and transient transfer characteristics of Hf0.57Zr0.43O2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with a WOx channel are investigated using a 2-D time-dependent Ginzburg-Landau model as implemented in a state-of-the-art
Xin Wen   +4 more
doaj   +1 more source

Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides

open access: yesIEEE Journal of the Electron Devices Society, 2022
This study examined the temperature-related piezoresistance issues of p-type doped 3C-silicon carbide (3C-SiC) materials. Previously, we proposed piezoresistance temperature models that describe phenomena based on the ionization energies of materials ...
Takaya Sugiura   +4 more
doaj   +1 more source

Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

open access: yesIEEE Journal of the Electron Devices Society, 2022
In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because ...
Eun-Kyeong Jang   +4 more
doaj   +1 more source

A Comparative Study of High-Efficiency Lead-Free Cs3Bi2X9 (X = Cl, Br, I)-Based Solar Cells

open access: yesTechnologies
Lead halide-based perovskite solar cells have gained significant attention from academia and the photovoltaic industry due to their exceptional optical and electrical characteristics.
Mahdi Alzubaidi   +3 more
doaj   +1 more source

Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling

open access: yesApplied Sciences, 2021
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed.
Jee-Hun Jeong, Ogyun Seok, Ho-Jun Lee
doaj   +1 more source

Organic Bioelectronics: Diversity of Electronics Along with Biosciences

open access: yesBiosensors
This review article provides an introductory overview of organic bioelectronics, focusing on the creation of electrical devices that use specialized carbon-based semiconducting materials to interact successfully with biological processes.
Syed Abdul Moiz   +2 more
doaj   +1 more source

Standard CMOS Process Integrated Silicon-Based Ultraviolet-Infrared Complementary Sensor

open access: yesIEEE Photonics Journal, 2022
This study proposes a new ultraviolet-infrared (UV-Ir) compatible sensor fabricated using the standard CMOS process. The concept is verified through a numerical simulation, wherein the standard CMOS process parameters used are evaluated.
Takaya Sugiura   +2 more
doaj   +1 more source

Optimizing Cu+ Perovskite Chlorides for 24% Efficiency

open access: yesCrystals
Lead-free perovskite solar cells are promising as sustainable photovoltaics, but most of the copper-based alternatives are inefficient and unstable. The copper(I) perovskite chlorides (CuMCl3, M = Fe, Cr, Zn) are optimized by tuning the thickness and ...
Syed Abdul Moiz   +2 more
doaj   +1 more source

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