Results 11 to 20 of about 875,510 (306)
Development of a device to simulate tooth mobility [PDF]
, 2010 Objectives: The testing of new materials under simulation of oral conditions is essential in medicine. For simulation of fracture strength different simulation devices are used for test set-up.
Bieniek KW +18 more
core +1 more source
Nonlinear time-domain macromodeling of OTA circuits [PDF]
, 1989 The authors present an accurate nonlinear macromodel of the operational transconductance amplifier (OTA) which is suitable for the transient simulation of OTA-based CMOS analog integrated circuits.
Cruz Moreno, J. +5 more
core +1 more source
Physical modeling of HZO-based ferroelectric field-effect transistors with a WOx channel
Frontiers in Nanotechnology, 2022 The quasistatic and transient transfer characteristics of Hf0.57Zr0.43O2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with a WOx channel are investigated using a 2-D time-dependent Ginzburg-Landau model as implemented in a state-of-the-art
Xin Wen +4 more
doaj +1 more source
Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications [PDF]
, 2017 In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWTs), which may have applications at 5nm CMOS technology.
Adamu-Lema, F. +3 more
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Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides
IEEE Journal of the Electron Devices Society, 2022 This study examined the temperature-related piezoresistance issues of p-type doped 3C-silicon carbide (3C-SiC) materials. Previously, we proposed piezoresistance temperature models that describe phenomena based on the ionization energies of materials ...
Takaya Sugiura +4 more
doaj +1 more source
Large-signal device simulation in time- and frequency-domain: a comparison [PDF]
, 2008 The aim of this paper is to compare the most common time- and frequency-domain numerical techniques for the determination of the steady-state solution in the physics-based simulation of a semiconductor device driven by a time-periodic generator.
Fabrizio Bonani +4 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2022 In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because ...
Eun-Kyeong Jang +4 more
doaj +1 more source
GaN HEMT DC I-V Device Model for Accurate RF Rectifier Simulation [PDF]
, 2017 Recently, various high-efficiency RF rectifiers have been proposed. In this article, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of ID-VDS ...
Kazuhiko Honjo +2 more
core +2 more sources
Whole device ELM simulations [PDF]
Journal of Nuclear Materials, 2009 A simple ELM model is used in the SOLPS fluid-plasma, Monte-Carlo neutrals code with a grid that encompasses the core and Scrape-Off Layer. Sources in the core are prescribed based on previous work done with a 1d core transport code, and with the transport coefficients varied to produce a reasonable match to a particular ASDEX Upgrade discharge.
openaire +3 more sources
On the Implementation of AM/AM AM/PM Behavioral Models in System Level Simulation [PDF]
, 2003 The use of nonlinear device behavioral models offers an economical way of simulating the performance of complex communication systems. A concrete method for implementing the AM/AM AM/PM behavioral model in system level simulation using ADS is developed ...
Shen, Y., Tauritz, J.L.
core +2 more sources