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Specifications for modelling fuel cell and combustion-based residential cogeneration device within whole-building simulation programs [PDF]
, 2007 This document contains the specifications for a series of residential cogeneration device models developed within IEA/ECBCS Annex 42. The devices covered are: solid oxide and polymer exchange membrane fuel cells (SOFC and PEM), and internal combustion ...
Beausoleil-Morrison, Ian +3 more
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Simulation of Optoelectronic Devices [PDF]
VLSI Design, 2001 In the spirit of reviewing various approaches to the modeling and simulation of optoelectronic devices, we discuss two specific examples, related respectively to Semiconductor Optical Amplifiers and to Quantum Cascade Lasers. In the former case, a tight‐binding analysis is performed aimed at the optimization of the polarization independence of the ...
Paolo Lugli +3 more
openaire +1 more source
Large-signal device simulation in time- and frequency-domain: a comparison [PDF]
, 2008 The aim of this paper is to compare the most common time- and frequency-domain numerical techniques for the determination of the steady-state solution in the physics-based simulation of a semiconductor device driven by a time-periodic generator.
Bonani, Fabrizio +7 more
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Experimental and bond graph based sensitivity calculations for micro-scale robust engineering design [PDF]
, 2005 Copyright @ 2005 IEEEBond graph modeling and sensitivity analysis are used to provide a platform for the robust design of a small mechatronic device, a behind-the-ear (BTE) hearing aid.
Wynn, HP +5 more
core +4 more sources
A multigrid approach for device simulation using locallinearization
, 2022 S.355-359This paper describes a numerical technique used for 2D device simulation. It is demonstrated that the constructed nonlinear multigrid (MG) algorithm yields to a considerable speed-up whereas the method of local linearization reduces the memory ...
Berger, M., Constapel, R.
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Determination of EBIC response by two-dimensional device simulation
, 2022 S.369-372An extension of the two-dimensional device simulation of small-geometry semiconductor devices is described. The EBIC response is determined by means of device simulation.
Stephan, R., Erlebach, A., Dallmann, G.
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Applied Sciences, 2021 A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed.
Jee-Hun Jeong, Ogyun Seok, Ho-Jun Lee
doaj +1 more source
Development of a device to simulate tooth mobility [PDF]
, 2010 Objectives: The testing of new materials under simulation of oral conditions is essential in medicine. For simulation of fracture strength different simulation devices are used for test set-up.
Lamper, Timea +3 more
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Standard CMOS Process Integrated Silicon-Based Ultraviolet-Infrared Complementary Sensor
IEEE Photonics Journal, 2022 This study proposes a new ultraviolet-infrared (UV-Ir) compatible sensor fabricated using the standard CMOS process. The concept is verified through a numerical simulation, wherein the standard CMOS process parameters used are evaluated.
Takaya Sugiura +2 more
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A Comparative Study of High-Efficiency Lead-Free Cs3Bi2X9 (X = Cl, Br, I)-Based Solar Cells
TechnologiesLead halide-based perovskite solar cells have gained significant attention from academia and the photovoltaic industry due to their exceptional optical and electrical characteristics.
Mahdi Alzubaidi +3 more
doaj +1 more source