Results 11 to 20 of about 10,222,482 (327)
Device simulation of highly efficient eco-friendly CH3NH3SnI3 perovskite solar cell. [PDF]
Sci Rep, 2021 Photoexcited lead-free perovskite CH 3 NH 3 SnI 3 based solar cell device was simulated using a solar cell capacitance simulator. It was modeled to investigate its output characteristics under AM 1.5G illumination.
Patel PK.
europepmc +2 more sources
Comprehensive device simulation of 23.36% efficient two-terminal perovskite-PbS CQD tandem solar cell for low-cost applications. [PDF]
Sci Rep, 2021 The major losses that limit the efficiency of a single-junction solar cell are thermalization loss and transmission loss. Thus, to efficiently utilize the full solar spectrum and to mitigate these losses, tandem solar cells (TSC) have significantly ...
Madan J, Singh K, Pandey R.
europepmc +2 more sources
NeurOLight: A Physics-Agnostic Neural Operator Enabling Parametric Photonic Device Simulation [PDF]
Neural Information Processing Systems, 2022 Optical computing is an emerging technology for next-generation efficient artificial intelligence (AI) due to its ultra-high speed and efficiency. Electromagnetic field simulation is critical to the design, optimization, and validation of photonic ...
Jiaqi Gu +6 more
semanticscholar +1 more source
Optical and quantum electronics, 2021 Double perovskite, Cs 2 AgBiBr 6 , is introduced as a lead-free perovskite solar cell. Device modeling of Cs 2 AgBiBr 6 (DP) was accomplished to obtain the optimum parameters using the Solar Cell Capacitance Simulator (SCAPS).
Aminreza Mohandes +2 more
semanticscholar +1 more source
IEEE Access, 2022 With the rapid growth of the semiconductor manufacturing industry, it has been evident that device simulation has been considered a sluggish process.
Chandni Akbar +2 more
semanticscholar +1 more source
IEEE Journal of the Electron Devices Society, 2015 This paper presents the results of a systematic theoretical investigation on the impact of gate height on the analog and radio-frequency (RF) performances of underlap-FinFET devices.
Sayani Ghosh +3 more
doaj +1 more source
Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides
IEEE Journal of the Electron Devices Society, 2022 This study examined the temperature-related piezoresistance issues of p-type doped 3C-silicon carbide (3C-SiC) materials. Previously, we proposed piezoresistance temperature models that describe phenomena based on the ionization energies of materials ...
Takaya Sugiura +4 more
doaj +1 more source
Nonlinear time-domain macromodeling of OTA circuits [PDF]
, 1989 The authors present an accurate nonlinear macromodel of the operational transconductance amplifier (OTA) which is suitable for the transient simulation of OTA-based CMOS analog integrated circuits.
Cruz Moreno, J. +5 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2022 In flash memory technology, mechanical stress is considered as one of the major factors that can influence the device performance. Furthermore, mechanical stress can have a greater impact on the electrical performance in 3D NAND than in 2D NAND because ...
Eun-Kyeong Jang +4 more
doaj +1 more source
Developing and testing a generic micro-combined heat and power model for simulations of dwellings and highly distributed power systems [PDF]
, 2008 This paper elaborates an approach to the modelling of domestic micro-combined heat and power (μ-CHP) using a building simulation tool that can provide a detailed picture of the environmental performance of both the μ-CHP heating system and the dwelling ...
Burt, G. +3 more
core +1 more source