Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications [PDF]
, 2017 In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWTs), which may have applications at 5nm CMOS technology.
Adamu-Lema, F. +3 more
core +1 more source
Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform
Journal of Computational Electronics, 2020 The aim of this paper is to present a flexible and open-source multi-scale simulation software which has been developed by the Device Modelling Group at the University of Glasgow to study the charge transport in contemporary ultra-scaled Nano-CMOS ...
S. Berrada +9 more
semanticscholar +1 more source
Layout to circuit extraction for three-dimensional thermal-electrical circuit simulation of device structures [PDF]
, 1996 In this paper, a method is proposed for extraction of coupled networks from layout information for simulation of electrothermal device behavior. The networks represent a three-dimensional (3-D) device structure with circuit elements.
Bosma, A. +3 more
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Physical modeling of HZO-based ferroelectric field-effect transistors with a WOx channel
Frontiers in Nanotechnology, 2022 The quasistatic and transient transfer characteristics of Hf0.57Zr0.43O2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with a WOx channel are investigated using a 2-D time-dependent Ginzburg-Landau model as implemented in a state-of-the-art
Xin Wen +4 more
doaj +1 more source
Distributed NEGF Algorithms for the Simulation of Nanoelectronic Devices with Scattering [PDF]
, 2011 Through the Non-Equilibrium Green's Function (NEGF) formalism, quantum-scale device simulation can be performed with the inclusion of electron-phonon scattering.
Cheng-Kok Koh +8 more
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Applied Sciences, 2021 A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed.
Jee-Hun Jeong, Ogyun Seok, Ho-Jun Lee
doaj +1 more source
GaN HEMT DC I-V Device Model for Accurate RF Rectifier Simulation [PDF]
, 2017 Recently, various high-efficiency RF rectifiers have been proposed. In this article, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of ID-VDS ...
Kazuhiko Honjo +2 more
core +2 more sources
Whole device ELM simulations [PDF]
Journal of Nuclear Materials, 2009 A simple ELM model is used in the SOLPS fluid-plasma, Monte-Carlo neutrals code with a grid that encompasses the core and Scrape-Off Layer. Sources in the core are prescribed based on previous work done with a 1d core transport code, and with the transport coefficients varied to produce a reasonable match to a particular ASDEX Upgrade discharge.
openaire +3 more sources
Standard CMOS Process Integrated Silicon-Based Ultraviolet-Infrared Complementary Sensor
IEEE Photonics Journal, 2022 This study proposes a new ultraviolet-infrared (UV-Ir) compatible sensor fabricated using the standard CMOS process. The concept is verified through a numerical simulation, wherein the standard CMOS process parameters used are evaluated.
Takaya Sugiura +2 more
doaj +1 more source
On the Implementation of AM/AM AM/PM Behavioral Models in System Level Simulation [PDF]
, 2003 The use of nonlinear device behavioral models offers an economical way of simulating the performance of complex communication systems. A concrete method for implementing the AM/AM AM/PM behavioral model in system level simulation using ADS is developed ...
Shen, Y., Tauritz, J.L.
core +2 more sources