Results 221 to 230 of about 782,391 (294)

In Situ Regenerative Adduct Assisted p‐Type Doping of Organic Semiconductor

open access: yesAdvanced Materials, EarlyView.
An in situ regenerative adduct‐assisted (IRAA) doping strategy is introduced for p‐type doping of organic semiconductors. A regenerating adduct serves as the dopant, enabling highly efficient doping with a choice of counterions. The generality of this approach provides a scalable route to dope a wide range of hole‐transport materials with high thermal ...
Brijesh K. Patel   +8 more
wiley   +1 more source

Orbital Electrowetting: From Continuous Droplet Transport to Programmable Microfluidics

open access: yesAdvanced Materials, EarlyView.
This work comprehensively summarizes the mechanisms, recent advances, potential applications, and key challenges of orbital electrowetting. It highlights that integrating orbital electrowetting with conventional electrowetting is required to enable complete digital‐microfluidic workflows while simplifying platform architecture.
Jie Tan   +7 more
wiley   +1 more source

Using a Zero‐Strain Reference Electrode to Distinguish Anode and Cathode Volume Changes in a Solid‐State Battery

open access: yesAdvanced Materials Interfaces, EarlyView.
Volume changes of a solid‐state battery cell are separated into the individual contributions of anode and cathode. Simultaneously determining the “reaction volumes” of both electrodes requires a reference electrode with a pressure‐independent potential.
Mervyn Soans   +5 more
wiley   +1 more source

Exploring the Potential of Zero‐Dimensional Carbon Nanomaterials in Photoluminescent, Electrochemiluminescent and Electrochemical Sensors

open access: yesAdvanced Materials Interfaces, EarlyView.
Zero‐dimensional carbon nanomaterials are presented as multifunctional platforms linking structure, property, and sensing performance. Surface engineering and heteroatom doping modulate electron‐transfer and luminescent behavior, enabling electrochemical, photoluminescent, and electrochemiluminescent detection. Fundamental design principles, analytical
Gustavo Martins   +8 more
wiley   +1 more source

Plasma‐Sequence‐Engineered Atomic Layer Deposition of Ultra‐Thin SiNx for Enhanced Etching Resistance in Extreme Ultraviolet Pellicles

open access: yesAdvanced Materials Interfaces, EarlyView.
Plasma‐sequence‐engineered ALD (PSE‐ALD), based on sequential NH3 and N2 plasma pulses, enables ultrathin, dense SiNx films. ToF‐MS analysis confirms ligand removal via HCl evolution, while increased film density indicates network densification. The resulting SiNx coating provides robust protection of graphite under H2 plasma exposure.
Hye‐Young Kim   +7 more
wiley   +1 more source

Home - About - Disclaimer - Privacy