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Design of Wideband Doherty Power Amplifier Using Inverse Continuous Class-F Mode

IEEE Transactions on Circuits and Systems - II - Express Briefs
This brief presents the theory and design method of a wideband Doherty power amplifier (DPA) using inverse continuous class-F mode (ICFM). It is illustrated that continuous class-F−1 mode impedance condition can be achieved for Doherty operation using a ...
Meng Ren   +7 more
semanticscholar   +1 more source

32.3 A Load-Variation-Tolerant Doherty Power Amplifier with Dual-Adaptive-Bias Scheme for 5G Handsets

IEEE International Solid-State Circuits Conference
In modern mobile communications, a high peak-to-average power ratio (PAPR) and a broadband bandwidth are essential for realizing high data-rate communication links. However, a high amplifier efficiency is crucial for a long battery life.
Shohei Imai   +3 more
semanticscholar   +1 more source

Integrated 5-W GaN Doherty Power Amplifier for 5G FR1 Bands with 19 dB Gain Over a 41% Bandwidth

Intelligent Memory Systems
This paper presents the design of a Doherty power amplifier for 5G applications in the FR1 5G bands, implemented with WIN's 150 nm GaN/SiC HEMT technology.
Giulia Bartolotti   +2 more
semanticscholar   +1 more source

A 3.6GHz Highly Efficient Dual-Driver Doherty Power Amplifier

2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)
This paper presents an advanced Doherty-type power amplifier architecture, which uses two driver amplifiers embedded in the Main and Peaking paths of the Doherty stage.
Ioannis Peppas   +7 more
semanticscholar   +1 more source

A Ka-Band Doherty-Like Non-Load Modulated Power Amplifier

IEEE Journal of Solid-State Circuits
This article describes a three-way power amplifier (PA) topology that achieves broadband power back-off (PBO) efficiency enhancement without using active load modulation on the Main PA or supply modulation.
E. Liu, Han Zhou, C. Fager, Hua Wang
semanticscholar   +1 more source

Doherty CMOS power amplifiers for 5G technology

2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2017
Currently, there is a large move towards 5G wireless technology beyond the existing, widely used 4G technology due to an increased use of smart devices, and multimedia content. 5G technology is expected to operate at high frequencies between 15 GHz and 100 Ghz opening up a new horizon for spectrum constrained future wireless communications.
Nourhan Elsayed   +3 more
openaire   +1 more source

Focusing on Doherty Power Amplifiers for S-Band

2012 19th International Conference on Microwaves, Radar & Wireless Communications, 2012
The aim of this paper is to provide an overview of the actual state-of-art about the Doherty Power Amplifier (DPA) for S-Band application and to present a new realization using GaN devices able to provide 41dBm saturated output power with 60% drain efficiency and 10dB gain at 2.14GHz.
GIOFRE', ROCCO   +3 more
openaire   +1 more source

Design of an E-band Doherty Power amplifier

2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2018
This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm.
Ahamed, Raju   +5 more
openaire   +4 more sources

Doherty Power Amplifier

2021
Nourhan Elsayed   +4 more
openaire   +1 more source

Design of a Wideband Doherty Power Amplifier with High Efficiency for 5G Application

Electronics (Switzerland), 2021
Anna Piacibello   +2 more
exaly  

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