Results 191 to 200 of about 134,248 (260)
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A GaN MMIC Wideband Continuous-Mode Doherty Power Amplifier for 6G FR3 cmWave Applications

European Microwave Integrated Circuits Conference
This paper presents a 10−14 GHz Doherty power amplifier (PA) implemented in GaN on SiC MMIC process aimed for future 6G FR3 centimeter-wave (cmWave) applications.
Han Zhou   +3 more
semanticscholar   +1 more source

Dual-Band Dual-Output Doherty Power Amplifier for Unsynchronized Time-Division Duplexing

IEEE transactions on microwave theory and techniques, 2023
Conventional multiband power amplifiers (PAs), when working in time-division duplex (TDD), require the transmit–receive intervals of all bands to be synchronized. This is an undesirable constraint in modern radio base stations.
P. Saad   +3 more
semanticscholar   +1 more source

The Doherty power amplifier

2015 IEEE MTT-S International Microwave Symposium, 2015
The Doherty power amplifier (DPA) architecture, in various formats using different technologies, has been a very popular means of providing high conversion efficiencies from raw electrical power to sophisticated modulated RF and microwave signals ever since the requirements for very high power amplitude modulated (AM) radio transmitters in the mid-1930'
openaire   +1 more source

A Broadband Four-Way Parallel–Series Doherty Power Amplifier for 5G Communications

IEEE Journal of Solid-State Circuits
This article presents a four-way hybrid parallel–series Doherty power amplifier (PA) architecture that supports broadband operation and deep power back-off (PBO) efficiency enhancement for next-generation wireless communication.
E. Liu, Hua Wang
semanticscholar   +1 more source

Design of a Dual-Input Doherty Power Amplifier With Selectable Output Port

IEEE Transactions on Circuits and Systems - II - Express Briefs, 2023
Power amplifiers (PAs) equipped with selectable or switchable output ports can often improve the performances of the microwave systems, especially in radar and satellite communication systems where both horizontal and vertical polarization can be ...
Yao Yao   +4 more
semanticscholar   +1 more source

A Linear Millimeter-Wave GaN MMIC Doherty Power Amplifier With Improved AM-AM and AM-PM Characteristics

IEEE transactions on microwave theory and techniques
This article proposes a new method to improve the linearity of millimeter-wave (mm-wave) gallium nitride (GaN) Doherty power amplifier (DPA) while maintaining high efficiency.
Xiaohu Fang   +5 more
semanticscholar   +1 more source

Dual-Mode Three-Way Doherty Power Amplifier With Extended High-Efficiency Range Against Load Mismatch

IEEE transactions on microwave theory and techniques
This article presents theoretical analysis and design methodology of a dual-mode three-way Doherty power amplifier (DPA) with an extended high-efficiency range and robust load mismatch adaptability.
Jingzhou Pang   +7 more
semanticscholar   +1 more source

GaN MMIC broadband Doherty power amplifier

2013 Asia-Pacific Microwave Conference Proceedings (APMC), 2013
A quarter-wavelength transformer, phase compensation network, offset line are the bandwidth limiting factors of Doherty PAs. In this paper, we expand the bandwidth of the Doherty PA by employing a new structure. The conventional phase compensation network is merged into an input matching circuit and the offset line is resonated-out by an inductor.
Seunghoon Jee   +4 more
openaire   +1 more source

Broadband GaAs HBT Doherty Power Amplifier for 5G NR Mobile Handset

IEEE Transactions on Circuits and Systems - II - Express Briefs
This brief proposes a broadband flat-gain Doherty power amplifier (DPA) for 5G new radio (NR) mobile handsets. It is implemented by the heterogeneous integration of GaAs HBT process for PA die and 6-layer laminate for output network.
Shaofei Bo   +5 more
semanticscholar   +1 more source

A Differential SiGe HBT Doherty Power Amplifier for Automotive Radar at 79 GHz

2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2023
In this paper, a differential Doherty power amplifier for automotive applications in a 130nm SiGe BiCMOS technology, featuring ft/fmax of 470/650 GHz, is presented.
Jan Schoepfel, H. Rücker, N. Pohl
semanticscholar   +1 more source

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