Results 91 to 100 of about 838 (183)

Determining bismuth content in GaAsBi alloys by energy‐dispersive X‐ray spectroscopy: A case study with multiple sets of k*‐factors for analytical transmission electron microscopy

Journal of Microscopy, EarlyView.
Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley   +1 more source

Surface Reordering During Layer‐by‐Layer Growth on SrTiO3

Advanced Materials, Volume 38, Issue 19, 1 April 2026.
Surface structures (left) derived from DFT‐constrained fitting to crystal truncation rods measured by synchrotron X‐ray scattering (right) after each monolayer of deposition during the MBE growth of SrTiO3${\rm SrTiO}_{3}$ (001). The bottom panel shows the bare substrate, the middle panel shows island formation upon deposition of a single layer of SrO,
I‐Cheng Tung, Xi Yan, June‐Hyuk Lee, Yang Liu, Seo Hyoung Chang, Zhenlin Luo, Friederike Wrobel, Nicholas T. Cheung, Kaden R. Lopez, Michael J. Bedzyk, Hawoong Hong, John W. Freeland, Hua Zhou, Kendra Letchworth‐Weaver, Dillon D. Fong   +14 more
wiley   +1 more source

Emerging single‐element ferroelectrics: From theory to experiment

InfoMat, Volume 8, Issue 4, April 2026.
This review explores recent developments in single‐element ferroelectrics, covering mechanisms of ferroelectric behavior, their crystal structures, key preparation methods, ferroelectric performance characteristics, and promising device applications in field‐effect transistors, photodetectors, and visual perceptrons.
Run Zhao, Yuhang Zhang, Chen‐Min Dai, Fan Li, Jinlei Zhang, Ju Gao, Yucheng Jiang, Cheng‐Wei Qiu   +7 more
wiley   +1 more source

Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering

Small Science, Volume 6, Issue 4, April 2026.
This study reports record‐high hole mobility in undoped GeSn quantum wells, validated through magnetotransport measurements. By modeling the transport properties, the authors discover that alloy scattering in their material is significantly weaker than predicted for random alloys and previously studied materials.
Troy A. Hutchins‐Delgado, Siddhant Gangwal, Steven Akwabli, Adelaide Bradicich, Priyanka Petluru, Hryhorii Stanchu, Sudip Acharya, Robin Scott, Nick Rosson, Michael Povolotskyi, Chia‐Tse Tai, Chia‐You Liu, Jiun‐Yun Li, Michael P. Lilly, Winson C. H. Kuo, Stephen D. House, Dragica Vasileska, Shui‐Qing Yu, Tzu‐Ming Lu   +18 more
wiley   +1 more source

Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity

Scientific Reports
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks.
Catherine L. Phillips, Alistair J. Brash, Max Godsland, Nicholas J. Martin, Andrew Foster, Anna Tomlinson, René Dost, Nasser Babazadeh, Elisa M. Sala, Luke Wilson, Jon Heffernan, Maurice S. Skolnick, A. Mark Fox   +12 more
doaj   +1 more source

Crystallization and 1.6 Å resolution crystal structure of an acylated GLP‐1/GIP analogue peptide

Acta Crystallographica Section F, Volume 82, Issue 4, Page 114-124, April 2026.
The 1.6 Å resolution diffraction and subsequent structure solution of an acylated GLP‐1/GIP analogue lipopeptide is reported. This represents the first published data on the crystal structure of an unbound GLP‐1 and/or GIP analogue lipopeptide.With the meteoric rise in interest in GLP‐1 and GIP analogue peptides in recent years, there is a drive for ...
Hamish M. Mitchell, Boguslaw Nocek, Emily J. Guinn, Jerry Y. Y. Heng   +3 more
wiley   +1 more source

Statistical Analysis of the Spatial Distribution of InAl Droplet-Etched Nanoholes in In_0.52Al_0.48As Layers

Crystals
By analyzing atomic force microscopy images, we studied the spatial distribution of nanoholes etched by InAl droplets in In0.52Al0.48As surfaces, employing molecular beam epitaxy.
Normen Auler, Dennis Deutsch, Dirk Reuter   +2 more
doaj   +1 more source

Droplet epitaxy for III-V semiconductor nanostructures

, 2015
Conferencia presentada en la VIII International Conference on Surfaces Materials and Vacuum (de la Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A. C.), celebrado en Puebla (México) del 21 al 25 de septiembre de 2015. The droplet epitaxy growth technique was ¿rstly used at the beginning of the 1990s by Koguchi et
openaire   +2 more sources

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

Nanoscale Research Letters, 2009
Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs
Heyn Ch, Stemmann A, Köppen T, Strelow Ch, Kipp T, Grave M, Mendach S, Hansen W   +7 more
doaj   +1 more source

Homoepitaxial growth of GaN thin film using radical assist sputter epitaxy method at low temperature

Results in Surfaces and Interfaces
We investigated unintentionally doped-gallium nitride (GaN) thin films grown on GaN template substrates at a substrate temperature of 600 °C using our developed radical assist sputter epitaxy (RaSE) method.
Masato Takeuchi, Ryo Ishikawa, Taku Hanna, Seiichi Sato, Tetsusei Kurashiki   +4 more
doaj   +1 more source