Results 111 to 120 of about 1,014,878 (298)

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

Advanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger, Maximilian M. Horn, Eva Röck, Diego Rosas Villalva, Lize Bynens, Jochen Vanderspikken, Christina Kousseff, Silène Gobeil, Olivier Bardagot, Nesibe Akmanşen‐Kalayci, Sarah H. Tolbert, Iain McCulloch, Wouter Maes, Demetra Tsokkou, Natalie Banerji   +14 more
wiley   +1 more source

Leaftronics: Bio‐Fractal Scaffolds From Leaf Venation for Low‐Waste Electronics

Advanced Materials, EarlyView.
“Leaftronics” transforms naturally evolved leaf venation into quasi‐fractal scaffolds for sustainable electronics. Polymer‐infiltrated leaf skeletons can be used to fabricate ultra‐smooth, reflow‐ and thin‐film‐compatible decomposable substrates, while making the same lignocellulose networks conducting results in flexible transparent electrodes.
Rakesh Rajendran Nair, Hrisheekesh Thachoth Chandran, Karl Leo, Hans Kleemann   +3 more
wiley   +1 more source

Dry Phosphorus silicate glass etching and surface conditioning and cleaning for multi-crystalline silicon solar cell processing

Solar Energy and Sustainable Development, 2014
As an alternative to the wet chemical etching method, dry chemical etching processes for Phosphorus silicate glass [PSG} layer rel11ova] using Trifluormethane/Sulfur Hexafluoride (CHF3/ SF6) gas mixture in commercial silicon-nitride plasma enhanced ...
Ahmed S. Kagilik
doaj  

High-Quality Dry Etching of LiNbO₃ Assisted by Proton Substitution through H₂-Plasma Surface Treatment. [PDF]

Nanomaterials (Basel), 2022
Aryal A, Stricklin I, Behzadirad M, Branch DW, Siddiqui A, Busani T.   +5 more
europepmc   +1 more source

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

Advanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae, Ji Hoon Han, Taeyoung Kim, Jongbum Won, Seokmin Park, Gyu Won Kim, Sungsoon Kim, Hong Choi, Taehoon Kim, Hong‐Sub Lee, Jae‐Hyun Lee, Young Jin Choi, Jinwoo Cheon, Wooyoung Shim   +13 more
wiley   +1 more source

Dry Etching Technology in VLSI

, 1987
In recent years dry etching technology of semiconductor materials has received increasing attention because of the fine-line etching requirement of VLSI and very very large scale integrated (VVLSI) circuits.
Wu, Chinswei
core  

Etching of the Relocated American House by Bernhardt Wall

, 2023
This print features an etching by Bernhardt Wall. This print was created in 1934. This etching features the American House, Carlinville, Illinois.https://scholarsjunction.msstate.edu/fvw-prints/2000/thumbnail ...
etching by Bernhardt Wall (American, 1872-1956)
core  

Phase‐Pure and Size‐Tunable Tin Halide Perovskite Quantum Dots

Advanced Materials, EarlyView.
A trioctylphosphine oxide modulated protocol allows for the synthesis and study of the optical properties of a broad library of tin halide perovskite quantum dots across multiple A‐ and X‐site compositions with precise size tuning while eliminating unwanted 2D phases.
Ole F. Dressler, Benjamin Aymoz, Sebastian Sabisch, Stefanie Frick, Sebastian Siol, Dmitry N. Dirin, Simon C. Boehme, Maksym V. Kovalenko   +7 more
wiley   +1 more source

Dry Etching Performance and Gas-Phase Parameters of C₆F₁₂O + Ar Plasma in Comparison with CF₄ + Ar. [PDF]

Materials (Basel), 2021
Lim N, Choi YS, Efremov A, Kwon KH.
europepmc   +1 more source

dry etching

Citation: 'dry etching' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.09489 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms ...
openaire   +1 more source