Results 111 to 120 of about 5,338 (231)

High Photoluminescence Intensity of Heterostructure AlGaN-based DUV-LED through Uniform Carrier Distribution

, 2022
We report a numerical analysis of the variation of Aluminium (Al) composition in Al Gallium Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode (DUV-LED) and its effects on the carrier concentration, radiative recombination, and photoluminescence
Noorden, Ahmad Fakhrurrazi Ahmad, Daud, Suzairi, Aman, Mohammad Amirul Hairol, Fajri, Faris Azim Ahmad, Bahadoran, Mahdi, Kadir, Muhammad Zamzuri Abdul   +5 more
core  

DUV Autofluorescence Microscopy for Cell Biology and Tissue Histology Biology of the Cell Biology of the Cell

, 2013
International audienceAutofluorescence spectroscopy is a powerful tool for molecular histology and for following metabolic processes in biological samples as it does not require labelling.
Villette, Sandrine, Sandrine Villette, Refregiers, Matthieu, M., Kaščáková, Slávka, Slavka Kascakova, Frédéric Jamme, Valérie Rouam, Rouam, Valerie, Stéphane Pallu, Matthieu Réfrégiers, Jamme, Frederic, Allouche, Fatma, Fatma Allouche, Pallu, Stéphane   +13 more
core   +1 more source

High-Performances AlGaN-based DUV-LED via Under-Level Multiple Quantum Well Configuration

Low internal and external quantum efficiencies in high Aluminium content AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED) occurred due to strong polarization effects, spontaneous and piezoelectric polarization, at the interface between two ...
Noorden, Ahmad Fakhrurrazi Ahmad, Kadir, Muhamad Zamzuri Abdul, Aman, Mohammad Amirul Hairol, Azrisham, Nurul Fathinah, Danial, Wan Hazman   +4 more
core   +1 more source

DUV photolithography of metal-oxo clusters : From photochemical processes to the applications in nanofabrication

, 2013
Le but principal de ce travail de thèse est de proposer un matériau précurseur d'oxydes métalliques (ZrO2, TiO2, HfO2) compatible avec la technique de photolithographie interférentielle DUV.
Stehlin, Fabrice
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Bilayer resists for DUV lithography.

Journal of Photopolymer Science and Technology, 2000
Tai, M. C., Fang, M. C., Chang, J. F., Lin, T. Y., Liu, T. C., Chuang, C. S., Cheng, H. B., Jean, T. S.   +7 more
openaire   +2 more sources

Polymer Effects on Acid Generation Efficiency Using EUV and DUV Exposures

, 2000
Thin resist films (< 1500 {angstrom}) based on DUV chemical approaches have been demonstrated for use in EUV lithography. Resists with good sensitivity (5--6 mJ/cm{sup 2}) were observed but imaging mechanisms, in particular as they affect sensitivity,
Dentinger, P.
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Structural Design of AlGaN Deep-Ultraviolet Laser at Wavelength 266.3 nm with Graded Electron Blocking Layer and Composite Quantum Wells/Barriers. [PDF]

ACS Omega
Haider SK, Rehman HU, Bi W, Wang F, Liu Y.   +4 more
europepmc   +1 more source

High Performance DUV Synaptic Oxide Thin Film Transistor with Rapid Response

Neuromorphic systems that enable parallel processing and self-learning are promising solutions to overcome the limitations of Von Neumann architectures.
Luo, Dongxiang, Lin, Delang, Sze Yan Yeung, Fion, Sing Kwok, Hoi, Chen, Rongsheng   +4 more
core   +1 more source

High Numerical Aperture Metalens for the Deep Ultraviolet. [PDF]

Adv Mater
Abdelraouf OAM, Lay CL, Ge H, Zhou Z, Zhang Y, Liu Y, Chen YF, Sim AJ, Wang Z.   +8 more
europepmc   +1 more source

Pattern Definition with DUV-Lithography at DTU Danchip

, 2014
Deep ultra violet (DUV) illumination generated with the help of a KrF laser can be utilized to produce components having sizes of some hundreds of nanometers.
Khomtchenko, Elena, Keil, Matthias, Gregersen, Anders, Johansen, Leif, Nyholt, Henrik   +4 more
core