Results 131 to 140 of about 2,020 (185)

Tunable AR for DUV lithography

SPIE Proceedings, 1997
A thermally cross-linking bottom anti-reflectant, AR2, is evaluated. The material can be made in a range of absorptivities. An optimum optical density of about 9/(mu) ( 248 nm) which lowers photoresist swing curves to less than 2%, was chosen from optical modeling and etch rate measurements. The material offers spin bowl compatibility with common spin-
Edward K. Pavelchek, Manuel doCanto
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Metamaterials for enhancement of DUV lithography

SPIE Proceedings, 2010
The unique properties of metamaterials, namely their negative refractive index, permittivity, and permeability, have gained much recent attention. Research into these materials has led to the realization of a host of applications that may be useful to enhance optical nanolithography, such as a high pass pupil filter based on an induced transmission ...
Andrew Estroff, Neal V. Lafferty, Peng Xie, Bruce W. Smith   +3 more
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DUV interferometry for micro and nanopatterning

2008 2nd ICTON Mediterranean Winter, 2008
In recent years, fabrication of chemical and topographical functional materials in the micrometer and nanometer scales has been drawing a great interest in the scientific community. The attention is not only due to the need for ever-increasing miniaturization of microelectronics for example, but also because of the discovery of many novel phenomena ...
Ridaoui, Hassam, Dirani, Ali, Soppera, Olivier   +2 more
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Development of AlGaN DUV-LED

2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 2013
We report on development for commercial production of 50mW class AlGaN based deep ultraviolet light-emitting diodes (DUVLED) with wave length ranging 255 to 355 nm. DUVLED have about 10% EQE and over 10000 hours life time.
Masamichi Ippommatsu, Akira Hirano, Isamu Akasaki, Hiroshi Amano   +3 more
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Introduction to FUV and DUV Spectroscopy

2015
Recently, both far ultraviolet (FUV) and deep UV (DUV) spectroscopies have received keen interest as new spectroscopies because they offer novel possibilities for studying electronic structure and transition, selective molecular imaging, high resolution microscopy, as well as applications for photoelectric devices.
Yukihiro Ozaki, Yuika Saito, Satoshi Kawata   +2 more
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An in-situ temperature measurement system for DUV lithography

IEEE Transactions on Instrumentation and Measurement, 2003
Spatial uniformity of temperature across a silicon wafer is an important requirement during the post-exposure bake step of the deep-ultra-violet lithography process. Closed-loop temperature control provides a means by which the stringent temperature specifications can be achieved, provided that accurate feedback signal is available.
Tan, W.W., Li, R.F.Y.
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Amine gradient process for DUV lithography

Polymer, 2001
Abstract Poly(acrylic acid-co-methyl acrylate) was synthesized as a base resin for over-coating materials. By adding l-proline as an amine source to the over-coating material, amine gradient could be useful for lithography. Using this amine gradient process, vertical pattern of 140 nm line/space could be obtained even though the light transmission of
J.-C Jung, M.-H Jung, G Lee, K.-H Baik
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Process performance comparisons on 300-mm i-line steppers, DUV stepper, and DUV scanners

SPIE Proceedings, 2000
SEMICONDUCTOR300 was the first pilot production facility for 300mm wafers in the world. This company, a joint venture between Infineon Technologies and Motorola, is working to develop a manufacturable 300mm wafer tool set. The lithography tools include I-line steppers, a DUV stepper, and two DUV scanners.
Thorsten Schedel, Alain B. Charles, Dietmar Ganz, Steffen R. Hornig, Guenther Hraschan, Wolfram Koestler, John G. Maltabes, Karl E. Mautz, Thomas Metzdorf, Ralf Otto, Sebastian Schmidt, Ralf Schuster   +11 more
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Impact of DUV exposure on reticle repairs

SPIE Proceedings, 2005
The reticle manufacturing process induces various defects on the mask that need to be repaired. Missing absorber or clear defects are often repaired by depositing a carbon-based material (depo) using a Focused Ion Beam (FIB) tool. Few cases of such depo repairs on defects in between nested contacts on attenuated phase shift masks were found to fail ...
Vikram L. Tolani, Scott Chegwidden, Edgar C. Buenconsejo, Daniel Tanzil, Daniel J. Bald   +4 more
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Thermal Management for DUV LEDs

2019
DUV LEDs possess very huge heating issue. On one hand, the sapphire substrate has a poor thermal conductivity, and on the other hand, DUV photons are easily absorbed by the absorptive p-GaN layer and the metal contact in the way of free carrier absorption, which further increases the self-heating effect for DUV LEDs.
Zi-Hui Zhang, Chunshuang Chu, Kangkai Tian, Yonghui Zhang   +3 more
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