Results 141 to 150 of about 2,020 (185)

Phase defects on DUV alternating PSMs

SPIE Proceedings, 2000
To extend the life of photo lithography, it has been proceeded the development of the strong PSMs which has no printing phase shifter defects. At PMJ'98, a defect inspection algorithm for phase shifter defects of 60 degrees on i-line multi-phase alternating PSMs was discussed (1) .
Ikuo Yoneda, Hideki Kanai, Shinji Yamaguchi, Iwao Higashikawa   +3 more
openaire   +1 more source

High speed diamond DUV-detector

1997 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1997
Two material systems compete for detector applications in the DUV range, namely GaN and diamond. Whereas GaN with a direct bandgap is intensively studied for light emitting structures, diamond with an indirect bandgap has a long background as particle and X-ray detector. In this study, a diamond DUV-detector based on a MSM structure has been fabricated
P. Gluche, O. Kohn, M. Binder, M. Adamschik, W. Ebert, A. Vescan, E. Rohrer, C.E. Nebel, E. Kohn   +8 more
openaire   +1 more source

Cost-effective DUV PSM process

SPIE Proceedings, 1999
A novel manufacturable and cost-effective DUV PSM process is developed and implemented in .18 micrometer and .15 micrometer PSM technology. Our novel process requires one resist coating and E-Beam exposure, hence lower cost and mis-alignment-free in chromium layer and shifter layer can be realized.
San-De Tzu, Ching S. Chiu, Chue-San Yoo, Jia-Jing Wang   +3 more
openaire   +1 more source

Characterization of DUV and VUV optical components

SPIE Proceedings, 2002
In order to improve the efficiency of optical components for microlithography, metrology for comprehensive characterization of DUV and VUV radiation and the related optics has been developed at Laser-Laboratorium Gottingen. The performance of optical components is assessed by measuring absorptance, scatter losses and damage thresholds during ArF and F2
Klaus R. Mann, G. Eckert, Christian Goerling, Uwe Leinhos, Bernd Schaefer   +4 more
openaire   +1 more source

Optical DUV-lithography for high microstructures

Microsystem Technologies, 1996
A new technology called 3D UV-Microforming consisting of an advanced resist preparation process, a UV lithographic step, resist development, a moulding procedure by electrodeposition, and finally stripping and cleaning for finishing the structures was developed for application in microsystem technology.
A. Heuberger, B. Löchel
openaire   +1 more source

Optimization of ARC process in DUV lithography

SPIE Proceedings, 1998
Inorganic Anti Reflective Coating (ARC) improves Critical Dimension (CD) uniformity over an exposing field by reducing the reflectivity of the ARC/substrate system in photoresist. A key parameter of the lithographic performance of an inorganic ARC is therefore the reflectivity of the ARC/substrate system in photoresist.
Kyung-Jin Shim, Byoung-Il Choi, Ki-Yeop Park, Won-Kyu Lee   +3 more
openaire   +1 more source

Ultrathin DUV resists for logic applications

SPIE Proceedings, 2002
Ultrathin ESCAP resists have been examined for logic applications in our paper. Lithographic studies have been carried out with these resists at the thickness of 60, 120 and 400 nm for contacts, and at the thickness of 250 vs 400nm for gate layer applications. A clear relationship between optimization of resist profile and film thickness through design
James W. Thackeray, James F. Cameron, Michael F. Cronin, Wesley Brykailo, Doris Kang   +4 more
openaire   +1 more source

Excimer lasers for DUV lithography

Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178), 1998
Summary form only given. The use of KrF and ArF excimer lasers as exposure sources for deep ultraviolet (DUV) lithography is discussed. Driven by extreme demands on performance, these lasers continually push the state-of-the-art in excimer laser design. Past, present, and future performance characteristics for these lasers are presented.
openaire   +1 more source

Total scatter measurements in the DUV/VUV

SPIE Proceedings, 1999
Light scattering of optical laser components gains in importance for the short wavelength range. A standard procedure for the measurement of 'total scattering' is described in the Draft International Standard ISO/DIS 13696, which is based on integration or collection of the scattered radiation.
Puja Kadkhoda, Detlev Ristau, Ferdinand von Alvensleben   +2 more
openaire   +1 more source

UV/DUV light emitters

Applied Physics Letters, 2023
Asif Khan, Michael Kneissl, Hiroshi Amano   +2 more
openaire   +1 more source