Results 121 to 130 of about 2,020 (185)

Black Nickel Coating as a Broadband Terahertz to Deep-Ultraviolet Absorber. [PDF]

ACS Omega
Menon A, Maltanava H, Belko N, Cojocari M, Gorbun M, Saushin A, Tamarov K, Leskinen JTT, Selenius M, Suvanto S, Semenov D, Malykhin S, Lehto VP, Fedorov G, Kuzhir P.   +14 more
europepmc   +1 more source

Optoelectronic Enhancement in Nanostructured h‑BN Synthesized Using Pulsed Ultrasonication. [PDF]

ACS Omega
Tony A, Mahato R, Bhaumik A.
europepmc   +1 more source

A Single-Layer Full-Color Diffractive Waveguide by Lithography. [PDF]

Nanomaterials (Basel)
Li Y, Wu F, Li H, Yang H, Wang M, Zheng Z.   +5 more
europepmc   +1 more source

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Manufacturing with DUV lithography

IBM Journal of Research and Development, 1997
Deep-UV (DUV) lithography has been developed to scale minimum feature sizes of devices on semiconductor chips to sub-half-micron dimensions. This paper reviews early manufacturing experiences at the IBM Microelectronics Division with deep ultraviolet (DUV) lithography at a 248-nm wavelength.
Steven J. Holmes, Peter H. Mitchell, Mark C. Hakey   +2 more
openaire   +1 more source

Planarizing AR for DUV lithography

SPIE Proceedings, 1999
A systematic approach was taken in order to improve the planarity of a DUV anti reflectant (AR) utilized for various lithographic steps, particularly those involving a patterned transparent layer. These layers can occur in both front and back end processing. Two approaches were pursued to accomplish this.
Timothy G. Adams, Suzanne Coley, Manuel doCanto, Dana Gronbeck, Matthew King, Edward K. Pavelchek   +5 more
openaire   +1 more source

Advanced DUV photolithography in a pilot line environment

IBM Journal of Research and Development, 1997
As the critical path to increasing circuit density, deep-ultraviolet (DUV) lithography has played a key role in the development of new semiconductor products. At present, DUV refers to imagery at the 248-nm wavelength, with the introduction of 193-nm photolithographic systems anticipated in the next few years.
Christopher P. Ausschnitt, Allan C. Thomas, Timothy J. Wiltshire   +2 more
openaire   +1 more source

Interfacial absorption of DUV coatings

SPIE Proceedings, 2001
Complicated dielectric coatings consist of a large number of layers and thus have many interfaces, that may contribute to the total absorption of the coatings. We examined this contribution of the interfaces using two different approaches. For the determination of the absorption of the first interface between the substrate and the coatings we varied ...
Oliver Apel, Michael Schulz-Grosser, Uwe Leinhos, Michael Kennedy, Klaus R. Mann, Rainer G. Schuhmann   +5 more
openaire   +1 more source

Microlithographic lens for DUV scanner

International Optical Design Conference, 2002
This paper describes several kinds of new technologies introduced into the latest microlithographic lens system for Nikon’s DUV (Deep Ultra Violet) scanner.
Tomoyuki Matsuyama, Yuichi Shibazaki
openaire   +1 more source

Characterization of advanced DUV photoresists

SPIE Proceedings, 1999
The first objective of this project was to characterize the lithographic performance of an advanced Acetal-based DUV resists. This resist is targeted for 0.25-0.18 micron geometries. The sensitivity of film thickness and uniformity to critical process parameters such as final dry spin time in the coater, soft bake time, soft bake temperature, method of
Murthy S. Krishna, Emir Gurer, Ed C. Lee, John W. Lewellen, Kevin M. Golden, John W. Salois, Gary E. Flores, Scott C. Wackerman, Reese M. Reynolds   +8 more
openaire   +1 more source