Results 181 to 190 of about 5,338 (231)

Metamaterials for enhancement of DUV lithography

SPIE Proceedings, 2010
The unique properties of metamaterials, namely their negative refractive index, permittivity, and permeability, have gained much recent attention. Research into these materials has led to the realization of a host of applications that may be useful to enhance optical nanolithography, such as a high pass pupil filter based on an induced transmission ...
Andrew Estroff, Neal V. Lafferty, Peng Xie, Bruce W. Smith   +3 more
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Development of AlGaN DUV-LED

2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 2013
We report on development for commercial production of 50mW class AlGaN based deep ultraviolet light-emitting diodes (DUVLED) with wave length ranging 255 to 355 nm. DUVLED have about 10% EQE and over 10000 hours life time.
Masamichi Ippommatsu, Akira Hirano, Isamu Akasaki, Hiroshi Amano   +3 more
openaire   +1 more source

An in-situ temperature measurement system for DUV lithography

IEEE Transactions on Instrumentation and Measurement, 2003
Spatial uniformity of temperature across a silicon wafer is an important requirement during the post-exposure bake step of the deep-ultra-violet lithography process. Closed-loop temperature control provides a means by which the stringent temperature specifications can be achieved, provided that accurate feedback signal is available.
Tan, W.W., Li, R.F.Y.
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Process performance comparisons on 300-mm i-line steppers, DUV stepper, and DUV scanners

SPIE Proceedings, 2000
SEMICONDUCTOR300 was the first pilot production facility for 300mm wafers in the world. This company, a joint venture between Infineon Technologies and Motorola, is working to develop a manufacturable 300mm wafer tool set. The lithography tools include I-line steppers, a DUV stepper, and two DUV scanners.
Thorsten Schedel, Alain B. Charles, Dietmar Ganz, Steffen R. Hornig, Guenther Hraschan, Wolfram Koestler, John G. Maltabes, Karl E. Mautz, Thomas Metzdorf, Ralf Otto, Sebastian Schmidt, Ralf Schuster   +11 more
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High speed diamond DUV-detector

1997 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1997
Two material systems compete for detector applications in the DUV range, namely GaN and diamond. Whereas GaN with a direct bandgap is intensively studied for light emitting structures, diamond with an indirect bandgap has a long background as particle and X-ray detector. In this study, a diamond DUV-detector based on a MSM structure has been fabricated
P. Gluche, O. Kohn, M. Binder, M. Adamschik, W. Ebert, A. Vescan, E. Rohrer, C.E. Nebel, E. Kohn   +8 more
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Cost-effective DUV PSM process

SPIE Proceedings, 1999
A novel manufacturable and cost-effective DUV PSM process is developed and implemented in .18 micrometer and .15 micrometer PSM technology. Our novel process requires one resist coating and E-Beam exposure, hence lower cost and mis-alignment-free in chromium layer and shifter layer can be realized.
San-De Tzu, Ching S. Chiu, Chue-San Yoo, Jia-Jing Wang   +3 more
openaire   +1 more source

Thermal Management for DUV LEDs

2019
DUV LEDs possess very huge heating issue. On one hand, the sapphire substrate has a poor thermal conductivity, and on the other hand, DUV photons are easily absorbed by the absorptive p-GaN layer and the metal contact in the way of free carrier absorption, which further increases the self-heating effect for DUV LEDs.
Zi-Hui Zhang, Chunshuang Chu, Kangkai Tian, Yonghui Zhang   +3 more
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Amine gradient process for DUV lithography

Polymer, 2001
Abstract Poly(acrylic acid-co-methyl acrylate) was synthesized as a base resin for over-coating materials. By adding l-proline as an amine source to the over-coating material, amine gradient could be useful for lithography. Using this amine gradient process, vertical pattern of 140 nm line/space could be obtained even though the light transmission of
J.-C Jung, M.-H Jung, G Lee, K.-H Baik
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Characterization of DUV and VUV optical components

SPIE Proceedings, 2002
In order to improve the efficiency of optical components for microlithography, metrology for comprehensive characterization of DUV and VUV radiation and the related optics has been developed at Laser-Laboratorium Gottingen. The performance of optical components is assessed by measuring absorptance, scatter losses and damage thresholds during ArF and F2
Klaus R. Mann, G. Eckert, Christian Goerling, Uwe Leinhos, Bernd Schaefer   +4 more
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Optical DUV-lithography for high microstructures

Microsystem Technologies, 1996
A new technology called 3D UV-Microforming consisting of an advanced resist preparation process, a UV lithographic step, resist development, a moulding procedure by electrodeposition, and finally stripping and cleaning for finishing the structures was developed for application in microsystem technology.
A. Heuberger, B. Löchel
openaire   +1 more source