Results 171 to 180 of about 5,338 (231)

Manufacturing with DUV lithography

IBM Journal of Research and Development, 1997
Deep-UV (DUV) lithography has been developed to scale minimum feature sizes of devices on semiconductor chips to sub-half-micron dimensions. This paper reviews early manufacturing experiences at the IBM Microelectronics Division with deep ultraviolet (DUV) lithography at a 248-nm wavelength.
Steven J. Holmes, Peter H. Mitchell, Mark C. Hakey   +2 more
openaire   +2 more sources

Development of a Reflective 193-nm DUV Microscope System for Defect Inspection of Large Optical Surfaces

Applied Sciences (Switzerland), 2019
We developed a 193-nm deep ultraviolet (DUV) microscope system based on the reflection mode for a precise inspection of various types of defects/cracks on large optical surfaces of the order of one meter in size.
I Jong Kim, Hongseung Kim, June Gyu Park   +2 more
exaly   +2 more sources

Microlithographic lens for DUV scanner

International Optical Design Conference, 2002
This paper describes several kinds of new technologies introduced into the latest microlithographic lens system for Nikon’s DUV (Deep Ultra Violet) scanner.
Tomoyuki Matsuyama, Yuichi Shibazaki
openaire   +1 more source

Planarizing AR for DUV lithography

SPIE Proceedings, 1999
A systematic approach was taken in order to improve the planarity of a DUV anti reflectant (AR) utilized for various lithographic steps, particularly those involving a patterned transparent layer. These layers can occur in both front and back end processing. Two approaches were pursued to accomplish this.
Timothy G. Adams, Suzanne Coley, Manuel doCanto, Dana Gronbeck, Matthew King, Edward K. Pavelchek   +5 more
openaire   +1 more source

DUV interferometry for micro and nanopatterning

2008 2nd ICTON Mediterranean Winter, 2008
In recent years, fabrication of chemical and topographical functional materials in the micrometer and nanometer scales has been drawing a great interest in the scientific community. The attention is not only due to the need for ever-increasing miniaturization of microelectronics for example, but also because of the discovery of many novel phenomena ...
Ridaoui, Hassam, Dirani, Ali, Soppera, Olivier   +2 more
openaire   +2 more sources

Advanced DUV photolithography in a pilot line environment

IBM Journal of Research and Development, 1997
As the critical path to increasing circuit density, deep-ultraviolet (DUV) lithography has played a key role in the development of new semiconductor products. At present, DUV refers to imagery at the 248-nm wavelength, with the introduction of 193-nm photolithographic systems anticipated in the next few years.
Christopher P. Ausschnitt, Allan C. Thomas, Timothy J. Wiltshire   +2 more
openaire   +1 more source

Characterization of advanced DUV photoresists

SPIE Proceedings, 1999
The first objective of this project was to characterize the lithographic performance of an advanced Acetal-based DUV resists. This resist is targeted for 0.25-0.18 micron geometries. The sensitivity of film thickness and uniformity to critical process parameters such as final dry spin time in the coater, soft bake time, soft bake temperature, method of
Murthy S. Krishna, Emir Gurer, Ed C. Lee, John W. Lewellen, Kevin M. Golden, John W. Salois, Gary E. Flores, Scott C. Wackerman, Reese M. Reynolds   +8 more
openaire   +1 more source

Interfacial absorption of DUV coatings

SPIE Proceedings, 2001
Complicated dielectric coatings consist of a large number of layers and thus have many interfaces, that may contribute to the total absorption of the coatings. We examined this contribution of the interfaces using two different approaches. For the determination of the absorption of the first interface between the substrate and the coatings we varied ...
Oliver Apel, Michael Schulz-Grosser, Uwe Leinhos, Michael Kennedy, Klaus R. Mann, Rainer G. Schuhmann   +5 more
openaire   +1 more source

Introduction to FUV and DUV Spectroscopy

2015
Recently, both far ultraviolet (FUV) and deep UV (DUV) spectroscopies have received keen interest as new spectroscopies because they offer novel possibilities for studying electronic structure and transition, selective molecular imaging, high resolution microscopy, as well as applications for photoelectric devices.
Yukihiro Ozaki, Yuika Saito, Satoshi Kawata   +2 more
openaire   +1 more source

Tunable AR for DUV lithography

SPIE Proceedings, 1997
A thermally cross-linking bottom anti-reflectant, AR2, is evaluated. The material can be made in a range of absorptivities. An optimum optical density of about 9/(mu) ( 248 nm) which lowers photoresist swing curves to less than 2%, was chosen from optical modeling and etch rate measurements. The material offers spin bowl compatibility with common spin-
Edward K. Pavelchek, Manuel doCanto
openaire   +1 more source