Results 61 to 70 of about 20,942 (191)
IEEE Access, 2021 Significant efforts have been devoted to improve the external quantum efficiency (EQE) of AlGaN-based top-emitting deep-UV light-emitting diodes (DUV LEDs).
Tae Hoon Park +3 more
doaj +1 more source
Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist. [PDF]
, 2006 Photostabilization is a widely used post lithographic resist treatment process, which allows to harden the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching.
Driessen, A. +3 more
core +1 more source
, 2009 This paper presents a new method and a constraint-based objective function to solve two problems related to the design of optical telecommunication networks, namely the Synchronous Optical Network Ring Assignment Problem (SRAP) and the Intra-ring ...
Pelleau, Marie +2 more
core +4 more sources
Flexible Memory: Progress, Challenges, and Opportunities
Advanced Intelligent Discovery, EarlyView.Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan +5 more
wiley +1 more source
DEEP ULTRAVIOLET LIGHT EMITTING DIODES (DUV LEDS)
Journal of Engineering Science (Chişinău), 2018 There are a variety of applications for devices that extend into the deep-UV, including biological agent detection and optical storage. The nitride material system is a set of semiconducting compounds that have wavelengths that span a broad range, from yellow to deep-UV. AlGaN has a direct bandgap that extends into the deep-UV range; the device-quality
openaire +3 more sources
IEEE Photonics Journal, 2017 The photoelectric properties and physical mechanism of AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs) with the superlattice p-type doping layer (PSL) are studied numerically and compared with the Al-composition (50%) conventional p ...
Qianying Si +4 more
doaj +1 more source
Lower bound on the spectral dimension near a black hole
, 2011 We consider an evaporating Schwarzschild black hole in a framework in which the spectral dimension of spacetime varies continuously from four at large distances to a number smaller than three at small distances, as suggested by various approaches to ...
D. Grumiller, D. Grumiller, S. Carlip
core +2 more sources
InfoMat, EarlyView.Single‐domain Si‐doped β‐Ga2O3 thin films grown on off‐axis sapphire eliminate domain boundaries, improving transport and photogating. Gate‐pulse modulation suppresses persistent photoconductivity, yielding ultrafast response and high detectivity. Integrated into a 24 × 24 array, the devices enable high frame rate DUV imaging and energy‐efficient ...
Jae Young Kim +9 more
wiley +1 more source
A Nonlinear Quantitative Model for Measuring Concentration Ratios From Raman Intensities
Journal of Raman Spectroscopy, EarlyView.Estimating concentration from Raman intensity ratios is complicated by cross‐contributions from overlapping peaks, causing measured ratios to deviate from the linear behavior assumed in conventional quantitative models. This nonlinear method fully accounts for cross‐contributions, allowing estimation of concentration over several orders of magnitude ...
Joseph Razzell Hollis
wiley +1 more source
Microsystems & NanoengineeringAlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral range (210–280 nm) have demonstrated potential applications in physical sterilization.
Xu Liu +10 more
doaj +1 more source