Results 151 to 160 of about 8,090 (214)

Deep-ultraviolet transparent conducting SrSnO₃ via heterostructure design. [PDF]

Sci Adv
Liu F, Yang Z, Abramovitch D, Guo S, Mkhoyan KA, Bernardi M, Jalan B.   +6 more
europepmc   +1 more source

Complex Body Wall Closure Defects in Seven Dog Fetuses: An Anatomic and CT Scan Study. [PDF]

Animals (Basel)
Martín-Alguacil N, Cozar JM, Avedillo L.   +2 more
europepmc   +1 more source

Impact of Channel Thickness and Doping Concentration for Normally-Off Operation in Sn-Doped β-Ga₂O₃ Phototransistors. [PDF]

Sensors (Basel)
Yoon Y, Kim Y, Shin M.
europepmc   +1 more source

Real-Time Acetone Gas Monitoring Using Calixarene-Functionalized Guided-Mode Resonance-Based Sensors. [PDF]

ACS Photonics
Rigler A, Unsworth WP, Krauss TF.
europepmc   +1 more source

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Development of AlGaN DUV-LED

2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 2013
We report on development for commercial production of 50mW class AlGaN based deep ultraviolet light-emitting diodes (DUVLED) with wave length ranging 255 to 355 nm. DUVLED have about 10% EQE and over 10000 hours life time.
Masamichi Ippommatsu, Akira Hirano, Isamu Akasaki, Hiroshi Amano   +3 more
openaire   +1 more source

Hermetic SMD-type reflector cavity packaging for DUV LEDs

Light-Emitting Devices, Materials, and Applications XXIV, 2020
Packaging materials usable for DUV-LEDs are limited as most organic materials are affected by DUV radiation. Packages used are TO-packages or 3D-structured ceramic housings with quartz lid. Due to DUV-LEDs radiating up to 50% of their light to the sides a significant share is lost.
Ulli Hansen, Simon Maus, Oliver Gyenge, Xiaodong Hu, Marco Queisser, Sebastian Marx   +5 more
openaire   +1 more source

Development of DUV-LED grown on high-temperature annealed AlN template

Gallium Nitride Materials and Devices XVI, 2021
A combination of the sputtering deposition and high-temperature annealing is a promising technique for preparing low-dislocation-density AlN templates. In this talk, MOVPE growth behavior of AlGaN films grown on the annealed AlN templates and on conventional MOVPE-grown AlN templates was comprehensively discussed.
Kenjiro Uesugi, Ding Wang, Kanako Shojiki, Shigeyuki Kuboya, Hideto Miyake   +4 more
openaire   +1 more source

Light extraction analysis of AlGaN nanowires with inverse taper for DUV LEDs

Light-Emitting Devices, Materials, and Applications XXV, 2021
Planar deep-ultraviolet (DUV) light emitting diodes (LEDs) suffer from extremely low external quantum efficiencies (EQEs) due to poor light extraction efficiencies (LEE) which are often less than 1%, hindering their widespread use. In AlGaN DUV LEDs with high Al-content, the positioning of the valence subbands leads to dominant transverse magnetic (TM)-
Bryan Melanson, Cheng Liu, Matthew Hartensveld, Jing Zhang   +3 more
openaire   +1 more source