Results 51 to 60 of about 8,090 (214)
The negative electron affinity of diamond allows to emit highly reductive electrons. By introducing intra‐bandgap states and an optimized electron transfer mechanism by surface functionalization with Ru(bpy)3, the formation of solvated electrons is achieved upon solar irradiation.
Benjamin Kiendl +20 more
wiley +1 more source
The trap states and defects near the active region in deep-ultraviolet (DUV) light-emitting diodes (LED) were investigated through wavelength-dependent photocurrent spectroscopy.
Seungyoung Lim +6 more
doaj +1 more source
Self‐Hybridized Exciton‐Polariton Photodetectors From Layered Metal‐Organic Chalcogenolates
Self‐hybridized exciton‐polariton photodetectors are demonstrated using high refractive index mithrene, eliminating the need for top mirrors. This simplified architecture enables tunable sub‐bandgap photodetection via lower exciton‐polariton states and enhanced carrier transport through ultrafast polariton group velocities.
Bongjun Choi +3 more
wiley +1 more source
The external quantum efficiency (EQE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) is still far from satisfactory due to the main issues of electron leakage and insufficient hole injection.
Mengran Liu, Chao Liu
doaj +1 more source
Here, we present a novel 3D cell patterning and culture platform. The “Floor‐Ceiling‐Chip” (FC‐Chip) consists of two opposing track‐etched membranes, creating a pseudo‐3D microenvironment for the cells in between. By providing the membranes with micropatterned cell‐adhesive islands of varying geometries and sizes, the FC‐Chip enables control over cell ...
Urandelger Tuvshindorj +10 more
wiley +1 more source
Photolithographic Mask Fabrication Process Using Cr/Sapphire Carriers [PDF]
Elaboration of the technology of novel photolithographic masks fabricated on sapphire substrates for UV and DUV application was described. The main technological steps of mask fabrication as Cr metallization deposition, selection of resist for ...
Paszkiewicz, Regina +2 more
core +2 more sources
III-Nitride Deep UV LED Without Electron Blocking Layer
AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL) to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p-doping and large valence band barrier for hole injection as well as ...
Zhongjie Ren +11 more
doaj +1 more source
We present a microfabrication and integration strategy for lead halide perovskite photodetectors on electronic readouts. Standard photolithography, aqueous processing, selective transparent electrode etching, and plasma‐assisted pixel isolation enable precise monolithic integration of patterned 400 × 400 perovskite microphotodetector arrays on a CMOS ...
Sergey Tsarev +14 more
wiley +1 more source
Progress in semiconductor diamond photodetectors and MEMS sensors
Diamond with an ultra-wide bandgap shows intrinsic performance that is extraordinarily superior to those of the currently available wide-bandgap semiconductors for deep-ultraviolet (DUV) photoelectronics and microelectromechanical systems (MEMS).
Meiyong Liao
doaj +1 more source
This study demonstrates ultrafast photocatalytic wettability switching in TiO2 thin films by tailoring substrate doping and interface oxides. Enhanced switching rates and hemiwicking effects are achieved through optimized material stacks and nanostructuring.
Rucha A. Deshpande +6 more
wiley +1 more source

