Pure edge-contact devices on single-layer-CVD-graphene integrated into a single chip [PDF]
Scientific Reports, 2023 We present a simple and cost-effective fabrication technique for on-chip integration of pure edge contact two-terminal (2T) and Graphene field effect transistor (GFET) devices with low contact resistance and nonlinear characteristics based on single ...
Saraswati Behera
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High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors [PDF]
ResearchEdge contact is essential for achieving the ultimate device pitch scaling of stacked nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large edge-contact resistance between 2D channels and contact metal, there is currently
Jiankun Xiao +7 more
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Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography. [PDF]
ACS Appl Mater Interfaces, 2022 The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their ...
Conde-Rubio A +3 more
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Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge-Contact. [PDF]
Adv Sci (Weinh), 2022 Nonvolatile phase‐change random access memory (PCRAM) is regarded as one of the promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM.
Wang X +17 more
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Mathematics, 2022 Optimization with edge contact avoidance and contact stress minimization is essential for gear design. Due to the complex geometry of modified helical face gear drives, it is complicated to find the optimal design parameters with the consideration of ...
Shenghui Wang +4 more
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One-dimensional edge contact to encapsulated MoS2 with a superconductor [PDF]
AIP Advances, 2021 Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices.
A. Seredinski +9 more
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Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier. [PDF]
Sci Rep, 2015 Black phosphorus (BP) is a new class of 2D material which holds promise for next generation transistor applications owing to its intrinsically superior carrier mobility properties.
Ling ZP +6 more
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Lower Limits of Contact Resistance in Phosphorene Nanodevices with Edge Contacts
Nanomaterials, 2022 Edge contacts are promising for improving carrier injection and contact resistance in devices based on two-dimensional (2D) materials, among which monolayer black phosphorus (BP), or phosphorene, is especially attractive for device applications.
Mirko Poljak +3 more
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Edge contact angle and modified Kelvin equation for condensation in open pores [PDF]
Physical Review E, 2017 We consider capillary condensation transitions occurring in open slits of width $L$ and finite height $H$ immersed in a reservoir of vapour. In this case the pressure at which condensation occurs is closer to saturation compared to that occurring in an ...
Malijevský, Alexandr +2 more
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Wafer‐Scale Fabrication of Edge‐Contacted Nanosheet Transistors via Alloying‐Mediated Phase Engineering [PDF]
Small ScienceEdge contacts offer significant potential for scaling down 2D transistors due to their minimal contact resistance and reduced contact length. However, their intricate fabrication complicates reproducible large‐scale production and evaluation of ...
Sora Jang +10 more
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