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Electrochemical etching modes of 4H-SiC in KOH solutions

Semiconductor Science and Technology, 2023
Electrochemical etching is a promising wet etching technology for preparing porous structures and the flat surface etching of 4H-SiC. In this study, the effects of current density and KOH concentration on the etching of 4H-SiC were investigated. We found
Shangyue Yang   +9 more
semanticscholar   +1 more source

Formation Pathways of Porous Alloy Nanoparticles through Selective Chemical and Electrochemical Etching.

Small, 2021
Porous alloy nanomaterials are important for applications in catalysis, sensing, and actuation. Chemical and electrochemical etching are two methods to form porous nanostructures by dealloying bimetallic nanoparticles (NPs).
Yingying Jiang   +3 more
semanticscholar   +1 more source

Vein-Like Ni-BTC@Ni3S4 with Sulfur Vacancy and Ni3+ Fabricated In Situ Etching Vulcanization Strategy for an Electrochemical Sensor of Dopamine.

ACS Applied Materials and Interfaces, 2023
In this study, a novel Ni-BTC@Ni3S4 composite was fabricated by solvothermal reaction using an in situ etching vulcanization strategy and characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron ...
Baitong Niu   +4 more
semanticscholar   +1 more source

Electrochemical etching

Electrochimica Acta, 1983
Silver faces with only a few exactly known dislocation emergence points were etched electrochemically. Deep pyramidal etch pits were observed on the screw dislocations whereas flat-bottomed pits arise on the edge dislocations. Qualitatively, this fact corresponds to the results obtained with natural, i.e. as-grown from the vapour phase, {0001}-faces of
Chr Nanev, K. Dicheva
openaire   +1 more source

Metal-assisted electrochemical etching of silicon

Nanotechnology, 2010
In this paper the metal-assisted electrochemical etching of silicon is introduced. By electrochemical measurement and sequent simulation, it is revealed that the potential of the valence band maximum at the silicon/metal interface is more negative than that of the silicon/electrolyte interface.
Z P, Huang   +4 more
openaire   +2 more sources

Achieve Superior Electrocatalytic Performance by Surface Copper Vacancy Defects during Electrochemical Etching Process.

Angewandte Chemie, 2020
Vacancy defects of catalyst has been extensively studied and proven to be beneficial to various electrocatalytic reactions. However, it remains a great challenge to systematically study the effects of vacancy defects on the electrocatalytic reaction ...
Niankun Guo   +10 more
semanticscholar   +1 more source

Electrochemical etching of CR-39

Nuclear Tracks, 1981
ABSTRACT An extensive study of the ECE of CR-39 has been carried out. The influence of various parameters such as temperature, reagent concentration, frequency, field strength, pre-etching… is reported.
Lferde, Z., Monnin, M.
openaire   +2 more sources

Electrochemical pore etching in Ge

Materials Science in Semiconductor Processing, 2006
Abstract While electrochemical pore etching in semiconductors has become a thriving field for research and applications in the past 15 years or so, little work has been done in Ge. Besides Si, Ge is the only semiconductor with a minority carrier diffusion length large enough to enable the use of backside illumination, which has proved to be the ...
F. Cheng, J. Carstensen, H. Föll
openaire   +1 more source

Electrochemical etching of MXenes: mechanism, challenges and future outlooks

Journal of Materials Chemistry A
This review focuses on the eco-friendly electrochemical etching synthesis of MXenes and their cutting-edge advancements compared to the conventional strategy, highlighting the innovations, challenges, and future outlooks.
Shaista Nouseen, M. Pumera
semanticscholar   +1 more source

Hexagonal GaN nanostructure via electrochemical etching

Experimental and Theoretical NANOTECHNOLOGY, 2022
Gallium nitride GaN thin films were deposited on Si (111) substrates using electrochemical deposition technique at 20 °C. SEM images and EDX results indicated that the growth of GaN films varies with the current density. XRD and Raman analyses showed the presence of hexagonal wurtzite and cubic zinc blende GaN phases with the crystallite size around 18 ...
null W. Cao, null Y. Chai
openaire   +2 more sources

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