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Multiple electron-beam lithography

Microelectronic Engineering, 2001
A number of multiple electron-beam approaches are currently under evaluation for sub-100-nm lithography. These approaches offer the potential of improving throughput for direct wafer writing and mask patterning and could have far reaching implications for the semiconductor industry.
Marian Mankos
exaly   +2 more sources

Electron-beam lithography

Physics World, 1997
Lithography – literally "stone writing" – is a process that is fundamental to the manufacture of integrated circuits. It is improvements in this process that have largely enabled the spectacular advances that have been made in the field of microelectronics over the last three decades.
Lloyd Harrlott, Alexander Liddle
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Electron beam lithography

Contemporary Physics, 1981
Abstract Electron beam lithography means writing patterns in thin films of electron sensitive material using a finely focused (sub-micrometre diameter) electron beam. By combining electrical scanning with interferometrically monitored mechanical motion, very complex patterns can be generated with great accuracy; for example, a pattern containing one ...
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Electron beam photoresists for nanoimprint lithography

Microelectronic Engineering, 2002
Abstract Polymer selection and critical dimension (CD) pattern uniformity across the wafer are key parameters for the nanoimprint lithography technique. This nanotechnology requires polymers having a low glass transition temperature (Tg) combined with a good etch resistance.
Gourgon, C., Perret, C., Micouin, G.
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Electron Beam Lithography

2012
Obtaining sub-20 nm lithography is not straightforward, even using a good tool with a sub-5 nm beam size. In this section, a brief overview of the various topics that will be covered in more depth in the rest of the chapter is given.
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Electron-beam lithography for small MOSFET's

IEEE Transactions on Electron Devices, 1980
Electron-beam lithography with a novel multilevel resist structure together with two-dimensional process and device modeling and dry processing with reactive sputter etching have been employed to produce silicon-gate NMOS devices with micrometer and submicrometer channel lengths. Results for transistors and ring oscillators are reported.
R.K. Watts   +4 more
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Electron beam lithography

Journal of Vacuum Science and Technology, 1982
Electron beam lithography has become the principal production method for fabricating integrated circuit masks and reticles for 1–1 projection printing and for direct step‐on‐wafer exposure. This has been the result of improved quality, lower cost, and high speed in writing patterns that are doubling in complexity every year.
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