Results 211 to 220 of about 18,755 (260)
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Electron beam array lithography
Journal of Vacuum Science and Technology, 1981Electron-beam array lithography (EBAL) uses array optics to expose 108 to 1010 resolution elements without mechanical motion. The array optics are based on the use of a first stage of deflection (coarse deflection) which selects one of an array of lenslets.
D. O. Smith, K. J. Harte
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Low Voltage Electron Beam Lithography
1992Abstract : In order to measure the energy spread of electrons emitted from various negative electron affinity cathode structures, a simple apparatus using a uniform retarding field inside night vision tubes and customized tubes (all made by Intevac) was constructed and initial measurements performed.
R. F. Pease, R. Browning
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1986
To develop greater LSIs, it is necessary to increase the number of pattern elements per unit area by reducing circuit patterns. The increase of pattern elements per chip needs high-speed pattern writing. The electron-beam lithography system has stepped into the limelight as one of the systems for meeting the demand of fine and high-speed writing.
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To develop greater LSIs, it is necessary to increase the number of pattern elements per unit area by reducing circuit patterns. The increase of pattern elements per chip needs high-speed pattern writing. The electron-beam lithography system has stepped into the limelight as one of the systems for meeting the demand of fine and high-speed writing.
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1984
Over the past decade, the trend in integrated circuits for computers always has been a doubling of the circuit density every year. To-day’s products have 64.000 memory cells or 700 logic circuits on a 5 × 5 mm2 sized chip. For to-morrow, we can expect 288.000 and 516.000 memory cells or 5000 logic circuits on a chip.
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Over the past decade, the trend in integrated circuits for computers always has been a doubling of the circuit density every year. To-day’s products have 64.000 memory cells or 700 logic circuits on a 5 × 5 mm2 sized chip. For to-morrow, we can expect 288.000 and 516.000 memory cells or 5000 logic circuits on a chip.
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The resolution of electron beam lithography
Microelectronic Engineering, 1992Abstract We present a model for the primary interaction of the electron beam with bound electrons in the resist. Time-dependent perturbation theory is used to calculate the probability that sites some distance from the electron beam will be exposed by the electromagnetic field around it.
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Scanning electron beam lithography
Proceedings, annual meeting, Electron Microscopy Society of America, 1983This paper discusses the role of scanning electron beam lithography in semiconductor microcircuit production and in the experimental fabrication of devices in the laboratory. It also describes the electron optical equipment developed for these applications.Electron beam lithography has found an important place in integrated circuit production through ...
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Exposure of Hydrogen Silsesquioxane in Electron Beam Lithography
ACS Applied Materials & InterfacesHydrogen silsesquioxane (HSQ) offers high-resolution patterning capabilities in electron beam lithography. However, electron scattering within the resist remains challenging to detect, complicating the process control. Since previous research primarily focused on minimizing forward scattering by employing thin resist layers, this work specifically ...
Yilin Zhang +7 more
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All-Water Etching-Free Electron Beam Lithography for On-Chip Nanomaterials
ACS Nano, 2023Xiangyi Wang, Hao Wang, Qinghua Yi
exaly