Results 21 to 30 of about 18,795 (259)

The Validation of Various Technological Factors Impact on the Electron Beam Lithography Process

Advances in Electrical and Electronic Engineering, 2021
One of the most significant processes in micro- and nanoelectronics technology is Electron Beam Lithography (EBL). This technique maintains a leading role in extremely high-resolution structures fabrication process with micro- and nanometer dimensions ...
Agnieszka Zawadzka, Kornelia Indykiewicz, Regina Paszkiewicz   +2 more
doaj   +1 more source

Fabrication characteristics of a line-and-space pattern and a dot pattern on a roll mold by using electron-beam lithography

Journal of Advanced Mechanical Design, Systems, and Manufacturing, 2016
Roll-to-roll nanoimprint lithography (RTR-NIL) has received considerable attention because it permits large-area nanopatterning with both high resolution and high throughput.
Kai OJIMA, Masashi SAITO, Noriyuki UNNO, Jun TANIGUCHI   +3 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask

AIP Advances, 2014
Two-dimensional (2D) atomic crystals and their hybrid structures have recently attracted much attention due to their potential applications. The fabrication of metallic contacts or nanostructures on 2D materials is very common and generally achieved by ...
Fu-Yu Shih, Shao-Yu Chen, Cheng-Hua Liu, Po-Hsun Ho, Tsuei-Shin Wu, Chun-Wei Chen, Yang-Fang Chen, Wei-Hua Wang   +7 more
doaj   +1 more source

Process study and the lithographic performance of commercially available silsesquioxane based electron sensitive resist Medusa 82

Micro and Nano Engineering, 2020
In the past 2 decades silsesquioxane has gained attention in the Electron Beam Lithography community as a negative tone electron-sensitive resist (HSQ) whose advantages (sub-20 nm resolution, high contrast, low Line Edge Roughness, good shape fidelity ...
Th. Mpatzaka, G. Zisis, I. Raptis, V. Vamvakas, C. Kaiser, T. Mai, M. Schirmer, M. Gerngroß, G. Papageorgiou   +8 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Implementation of an autocorrelation-based adaptive alignment mark detection method in electron beam lithography [PDF]

Nanotechnology and Precision Engineering
High accuracy and precision overlay and stitching in electron beam lithography demand rapid and robust detection of alignment marks. Here, we implement an autocorrelation-based adaptive alignment mark detection method that processes one-dimensional ...
Zhixuan Pan, Bohua Yin, Jingyu Huang, Botong Sun, Zhengjie Li, Guanglu Xu, Liping Zhang, Huibin Zhao, Li Han   +8 more
doaj   +1 more source

Chiral Phase Change Nanomaterials

Advanced Functional Materials, EarlyView.
This work demonstrates reversible, non‐volatile phase transitions in chiral Ge2${\rm Ge}_2$Sb2${\rm Sb}_2$Te5${\rm Te}_5$ (GST) nanohelices for high‐speed optical modulation of chirality and dynamic control of the state of polarization (SOP). The chiral nanostructures are fabricated using a highly directional, wafer‐scale physical vapor deposition ...
Joshua A. Burrow, Md Shah Alam, Riad Yahiaoui, Evan M. Smith, Ryan Laing, Jules Gardener, Thomas A. Searles, Piyush J. Shah, Shivashankar Vangala, Joshua R. Hendrickson, Andrew M. Sarangan, Imad Agha   +11 more
wiley   +1 more source