Results 31 to 40 of about 18,755 (260)

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Transfer Printing and Reconfiguration of Soft Electronics Using Digital Microfluidics and Laser Machining

Advanced Functional Materials, EarlyView.
This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen, Chi Cong Nguyen, Tran Bach Dang, Phuoc Thien Phan, Jordan Thorpe, Michael Listyawan, Nhat Minh Doan, Sinuo Zhao, Hongru Chen, Trung Thien Hoang, Mingsheng Xu, Jisheng Han, Thanh Nho Do, Adam Hill, Timothée Mouterde, Hoang‐Phuong Phan   +15 more
wiley   +1 more source

LITHOGRAPHIC TECHNOLOGIES FOR SUBMICRONIC PATTERNS DESIGN APPLIED IN MICROSENSORS DOMAIN

Nonconventional Technologies Review, 2019
The present article is based on the results of a project that had as main objective to achieve submicronic patterns using different lithography techniques - electron beam lithography and atomic force microscopy lithography. Ways to obtain these patterns
Liliana Laura Badita, Gheorghe Gheorghe, Valentin Gornoava, Aurel Zapciu   +3 more
doaj  

Nanopatterning of Weak Links in Superconducting Oxide Interfaces

Nanomaterials, 2021
The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO), hosts a quasi-two-dimensional electron gas (q2DEG), two-dimensional superconductivity, ferromagnetism, and giant Rashba spin-orbit coupling.
Gyanendra Singh, Edouard Lesne, Dag Winkler, Tord Claeson, Thilo Bauch, Floriana Lombardi, Andrea D. Caviglia, Alexei Kalaboukhov   +7 more
doaj   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

Advanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone, Meng Tang, Camelia Florica, Bin He, Jingkai Xu, Selma Amara, Georgian Melinte, Xixiang Zhang, Gianluca Setti   +8 more
wiley   +1 more source

Photoresist systems in floating T-gate fabrication for GaN high electron mobility transistors

Nano Materials Science
Gallium Nitride (GaN) high electron mobility transistors (HEMTs) have garnered significant attention in micro/millimeter wave and terahertz technologies due to their unique material properties, including a large bandgap, a strong electron mobility, a ...
Shili Xiang, Qichao Ding, Jun Liu, Hao Hu, Bo Zhao, Shuangzan Lu, Fan Huang, Joao Cunha, José Rodrigues, Zhipeng Yu, Hong Yin   +10 more
doaj   +1 more source

Nanopillar and nanohole fabrication via mixed lithography

Materials Research Express, 2020
We report a fabrication method for the production of nanopillar (NP) or nanohole (NH) arrays together with a micrometer-sized structure within a single layer.
Seung Hee Baek, Sunwoong Lee, Ju-Hyun Bae, Chang-Won Hong, Mae-Ja Park, Hongsik Park, Moon-Chang Baek, Sung-Wook Nam   +7 more
doaj   +1 more source

Intra-level mix and match lithography with electron beam lithography and i-line stepper combined with resolution enhancement for structures below the CD-limit

Micro and Nano Engineering, 2023
Herein, an Intra-level Mix & Match approach (ILM&M) was investigated to combine electron beam lithography (EBL) and i-line stepper lithography on the same resist layer.
C. Helke, C.H. Canpolat-Schmidt, G. Heldt, S. Schermer, S. Hartmann, A. Voigt, D. Reuter   +6 more
doaj   +1 more source

Ultrasensitive Anti‐Stokes Luminescence Thermometry in Transition Metal Dichalcogenide Monolayers

Advanced Functional Materials, EarlyView.
We demonstrate a highly sensitive nanothermometer using anti‐Stokes photoluminescence, also known as photoluminescence upconversion (UPL), in monolayer tungsten disulfide. A strong resonantly enhanced UPL is observed, confirming the central role of optical phonons in the PL upconversion mechanism.
Sharada Nagarkar, Fahrettin Sarcan, Elanur Hut, Emiliano R. Martins, Stuart A. Cavill, Thomas F. Krauss, Yue Wang   +6 more
wiley   +1 more source

Real-time generation of circular patterns in electron beam lithography

Nanotechnology and Precision Engineering
Electron beam lithography (EBL) involves the transfer of a pattern onto the surface of a substrate by first scanning a thin layer of organic film (called resist) on the surface by a tightly focused and precisely controlled electron beam (exposure) and ...
Zhengjie Li, Bohua Yin, Botong Sun, Jingyu Huang, Pengfei Wang, Li Han   +5 more
doaj   +1 more source