Results 71 to 80 of about 18,795 (259)

Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity

Advanced Materials, EarlyView.
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen, Ke Yang, Yuhuan Li, Lingli Huang, Tianren Chen, Ming Yang, Jiong Zhao, Thuc Hue Ly   +7 more
wiley   +1 more source

Tailoring Symmetry Breaking in Engineered van der Waals Superlattices

Advanced Materials, EarlyView.
We pioneer a scheme to tailor superpotentials in graphene based on intrinsic substrate electronic orders rather than twist angle. The resulting superpotential folds graphene's Dirac cones to either Γ$\Gamma$ or K‐points, leading to distinct symmetry behaviors.
Keda Jin, Lennart Klebl, Zachary A. H. Goodwin, Junting Zhao, Felix Lüpke, Dante M. Kennes, Jose Martinez‐Castro, Markus Ternes   +7 more
wiley   +1 more source

Transmitted electron exposure in electron beam lithography for double-side patterning of bi-layer metasurfaces on a SiNx membrane

Micro and Nano Engineering
Metasheets, composed of two identical metasurfaces closely aligned to each other within a mode-coupling distance on the two opposite sides of a SiNx membrane, are of unique functionalities for effective modulation of electromagnetic waves by nanoscale ...
Jinyu Guo, Yifei Wang, Hao Quan, Shuoqiu Tian, Qiucheng Chen, Wentao Yuan, Qingxin Wu, Kangping Liu, Yifang Chen, Qiong He, Lei Zhou   +10 more
doaj   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

electron beam lithography

Citation: 'electron beam lithography' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.09505 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for ...
openaire   +2 more sources

Raster-Atomic force nanolithography: New insights towards the fabrication of 3D nanostructures on PMMA and Silicon Nitride

Nano Trends
The rapid advancement of nanoscience has driven significant interest in manipulating materials at the nanoscale, a capability critical to diverse High-tech fields.
Lorenzo Vincenti, Paolo Pellegrino, Isabella Farella, Mariafrancesca Cascione, Valeria De Matteis, Fabio Quaranta, Rosaria Rinaldi   +6 more
doaj   +1 more source

Fabrication of a Highly NO₂-Sensitive Gas Sensor Based on a Defective ZnO Nanofilm and Using Electron Beam Lithography. [PDF]

Micromachines (Basel), 2023
Feng Z, Giubertoni D, Cian A, Valt M, Ardit M, Pedrielli A, Vanzetti L, Fabbri B, Guidi V, Gaiardo A.   +9 more
europepmc   +1 more source

Measuring and Manipulating Density of States in Two‐Dimensional Materials With Electrochemical Capacitance

Advanced Materials Interfaces, EarlyView.
We report electrochemical quantum capacitance spectroscopy as an ambient, in situ probe for defect‐mediated electronic structure at 2D material interfaces. Using monolayer MoS2, the method resolves band edges and vacancy states, tracks sulfur‐vacancy evolution during hydrogen evolution, and links interfacial density‐of‐states changes to nearly ...
Mengyu Yan, Mitchell Kaiser, Maria L. Sushko, Xiaobin Liao, Hao Tang, Chun‐Chih Tseng, Matthew Yankowitz, Ying Xia, Jihui Yang, Jun Liu   +9 more
wiley   +1 more source

A Single-Component Molecular Glass Resist Based on Tetraphenylsilane Derivatives for Electron Beam Lithography. [PDF]

ACS Omega, 2023
Wang Y, Yuan J, Chen J, Zeng Y, Yu T, Guo X, Wang S, Yang G, Li Y.   +8 more
europepmc   +1 more source

Al2O3 Ring Array by Infiltration Synthesis in Polystyrene Antidot Template

Advanced Materials Interfaces, EarlyView.
Different morphologies, such as full dots for genuine PS‐b‐PMMA, residual dots for the PS antidot array (resulting from an Acetic Acid (AA) last PS‐b‐PMMA), and rings for the modified PS antidot array (derived from an O2 plasma last PS‐b‐PMMA), originated from SIS process in PS‐b‐PMMA BCP array, due to the different reaction sites for the TMA precursor
Gabriele Seguini, Alessia Motta, Jacopo Frascaroli, Guido Rademaker, Ahmed Gharbi, Raluca Tiron, Michele Perego, Graziella Tallarida   +7 more
wiley   +1 more source