Results 21 to 30 of about 78,934 (289)

Neutron ellipsometry

open access: yesJournal of Magnetism and Magnetic Materials, 1993
We discuss the similarities which exist between the reflection of neutrons from ferromagnetic media and the reflection of light from media rendered gyrotropic by the application of a magnetic field, and show that the vector character of the neutron polarisation can be fully exploited in spin-analysed neutron reflection measurements (termed 'neutron ...
Bland, J   +3 more
openaire   +1 more source

Ion-implantation induced anomalous surface amorphization in silicon [PDF]

open access: yes, 1994
Spectroscopic ellipsometry (SE), high-depth-resolution Rutherford backscattering (RBS) and channeling have been used to examine the surface damage formed by room temperature N and B implantation into silicon.
Fried, M.   +8 more
core   +3 more sources

Systematic and random errors in rotating-analyzer, ellipsometry [PDF]

open access: yes, 1988
Errors and error sources occurring in rotating-analyzer ellipsometry are discussed. From general considerations it is shown that a rotating-analyzer ellipsometer is inaccurate if applied at P = 0° and in cases when π = 0° or where Δ is near 0° or 180 ...
Nijs, J.M.M. de, Silfhout, A. van
core   +8 more sources

Ellipsometric measurements by use of photon pairs generated by spontaneous parametric down-conversion [PDF]

open access: yes, 2001
We present a novel interferometric technique for performing ellipsometric measurements. This technique relies on the use of a non-classical optical source, namely, polarization-entangled twin photons generated by spontaneous parametric down-conversion ...
Abouraddy   +16 more
core   +3 more sources

Temperature-Dependent Spectroscopic Ellipsometry of Thin Polymer Films

open access: yesJournal of Physical Chemistry B, 2020
Thin polymer films have found many important applications in organic electronics, such as active layers, protective layers, or antistatic layers. Among the various experimental methods suitable for studying the thermo-optical properties of thin polymer ...
B. Hajduk, H. Bednarski, B. Trzebicka
semanticscholar   +1 more source

Fundamentals and applications of spectroscopic ellipsometry

open access: yesQuímica Nova, 2002
This paper describes the use of ellipsometry as a precise and accurate technique for characterizing substrates and overlayers. A brief historical development of ellipsometry and the basic principles necessary to understand how an ellipsometer works are ...
Débora Gonçalves, Eugene A. Irene
doaj   +1 more source

Experimental and Theoretical Studies of the Optical Properties of the Schiff Bases and Their Materials Obtained from o-Phenylenediamine

open access: yesMolecules, 2022
Two macrocyclic Schiff bases derived from o-phenylenediamine and 2-hydroxy-5-methylisophthalaldehyde L1 or 2-hydroxy-5-tert-butyl-1,3-benzenedicarboxaldehyde L2, respectively, were obtained and characterized by X-ray crystallography and spectroscopy (UV ...
Magdalena Barwiolek   +7 more
doaj   +1 more source

Optical properties of carbon nanofiber photonic crystals [PDF]

open access: yes, 2010
Carbon nanofibers (CNF) are used as components of planar photonic crystals. Square and rectangular lattices and random patterns of vertically aligned CNF were fabricated and their properties studied using ellipsometry.
A I Fernandez-Dominguez   +17 more
core   +3 more sources

Plasma Polymerized Organosilicon Thin Films for Volatile Organic Compound (VOC) Detection

open access: yesPlasma, 2023
Plasma polymerized (PP) thin films deposited in a soft or intermediate plasma discharge from hexamethyldisiloxane (HMDSO) were developed as sensors for the detection of volatile organic compound (VOC) vapors.
Ghadi Dakroub   +6 more
doaj   +1 more source

Argon irradiation effects on the structural and optical properties of reactively sputtered CrN films [PDF]

open access: yesScience of Sintering, 2015
The present study deals with CrN films irradiated at room temperature (RT) with 200 keV Ar+ ions. The CrN layers were deposited by d.c. reactive sputtering on Si (100) wafers, at nitrogen partial pressure of 5×10-4 mbar, to a total thickness of ...
Novaković M., Popović M., Bibić N.
doaj   +1 more source

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