Results 71 to 80 of about 7,247 (181)
Advanced Science, EarlyView.Combining template stripping with a graphene‐inspired transfer yields continuous, transferable gold films at 6‐inch wafer scale with thicknesses approaching the atomic limit. The atomically smooth, near‐bulk‐quality films offer above 86% transmittance and sub‐20 Ω/square sheet resistance, serving as a universal platform for flexible optoelectronics ...
Dmitry Yakubovsky +24 more
wiley +1 more source
Real‐Time Investigation of Interfacial Evolution in Electrochemical Energy Storage Systems via EQCM
Advanced Science, EarlyView.Understanding the electrode/electrolyte interface (EEI) is crucial for supercapacitors and batteries. EQCM, by enabling real‐time monitoring of mass changes during charge–discharge cycles, has evolved into a vital method for analysis of EEI. It provides important insights into charge‐storage mechanisms, electrode structural evolution, ion‐transfer ...
Zixuan Wang, Situo Cheng, Guang Feng
wiley +1 more source
Metal‐Half‐Salen Chemistry for One‐Pot Mineralization on Hydrophobic Polymer Membranes
Advanced Science, EarlyView.Here we report a versatile one‐pot synthetic strategy for organic–inorganic composite membranes, which leverages a metal half‐Salen system to precisely govern the competing kinetics of coordination and hydrolysis. In contrast to conventional two‐step metal‐phenol chemistries, our integrated approach substantially simplifies the fabrication process ...
Rou‐Ming Wen +8 more
wiley +1 more source
Optical Calibration of a Multi-Color Ellipsometric Mapping Tool Fabricated Using Cheap Parts
PhotonicsWe developed and applied a new calibration method to make more accurate measurements with our multi-color ellipsometric mapping tool made from cheap parts.
Berhane Nugusse Zereay +6 more
doaj +1 more source
Porous Ultralow‐κ sp2‐Bonded Boron Nitride Thin Films as Copper Diffusion Barriers
Advanced Science, EarlyView.Porous sp2‐bonded boron nitride (p‐BN) thin films with an ultralow dielectric constant (κ = 1.77) are directly grown on Si substrates via RF magnetron sputtering. The films feature uniform nanopores (1.85 nm), high mechanical stability, hydrophobicity, and excellent Cu diffusion barrier performance even at 3 nm thickness, offering a promising solution ...
Caiyun Liu +11 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.An experimentally validated optoelectronic device model is presented to describe the efficiency and roll‐off behavior of single‐layer TADF OLEDs. By coupling charge transport, exciton dynamics, and optical outcoupling, the model reproduces the External Quantum Efficiency (EQE) across different emission layer thicknesses and temperatures, offering ...
Jawid Nikan +4 more
wiley +1 more source
Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses
Advanced Electronic Materials, EarlyView.Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol +7 more
wiley +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
New Journal of Physics, 2018 The framework of many-body perturbation theory led to deep insight into electronic structure and optical properties of diverse systems and, in particular, many semiconductors.
André Schleife +7 more
doaj +1 more source
Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping
Advanced Electronic Materials, EarlyView.EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe +11 more
wiley +1 more source