Results 201 to 210 of about 99,173 (297)

Defect‐Engineered MOF/COF S‐Scheme Heterojunction With Dual‐Channel Charge Transport for Ultraefficient Solar‐Powered Heavy Metal Remediation

Advanced Science, EarlyView.
Covalent bond MOF/COF S‐scheme which generated via vacuum‐induced oxygen vacancies are report. OVs at the interface can trigger a dual‐channel charge transport mechanism, significantly enhancing catalytic performance. This work not only designs a high‐performance photocatalysts for environmental remediation, but also induces a new concept of “defect ...
Yuqian Zhong, Xinpeng Wang, Weiqun Shi, Liyong Yuan   +3 more
wiley   +1 more source

Anchored epitaxial growth of single-oriented one-dimensional organic nanowires towards their integration into field-effect transistors and polarization-sensitive photodetector arrays. [PDF]

RSC Adv
Keo P, Yan T, Wang J, Zhang X, Shi Y, Jie J.   +5 more
europepmc   +1 more source

Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors

Advanced Science, EarlyView.
This work introduces a defect‐tolerant integration strategy that enables freestanding BaTiO3 membranes to form low‐leakage top‐gate junctions with MoS2. The resulting FeFETs exhibit a record 0.22 V nm−1 memory window, ultrahigh‐k response, and near‐ideal subthreshold swings.
Zejing Guo, Xuyang Sha, Fang Xu, Guangyi Huang, Jinfeng Zhang, Yang Mou, Guorui Zhao, Jiaqi Liu, Qing Lan, Wenqing Song, Cheng Zhang, Hai Huang, Changlin Zheng, Lingfei Wang, Hangwen Guo, Jian Shen, Wu Shi   +16 more
wiley   +1 more source

Three‐Dimensional Heterogeneous Bonding for High‐Density and Low‐Noise TMR Sensing Arrays

Advanced Science, EarlyView.
This study demonstrates a three‐dimensional heterogeneous bonding approach to fabricate compact TMR sensing units with double junction numbers and improved magnetic performance. Optimized Au─Au bonding and angled etching improve device integrity, noise characteristics, and magnetoresistance.
Zi'ang Han, Zhenhu Jin, Chenglong Zhang, Jiamin Chen   +3 more
wiley   +1 more source

Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC. [PDF]

Micromachines (Basel)
Yuan W, Pei Y, Li Y, Guo N, Zhang X, Liu X.   +5 more
europepmc   +1 more source

Emerging Device Applications From Strong Light–Matter Interactions in 2D Materials

Advanced Science, EarlyView.
Two‐dimensional semiconductors enable extremely compact optoelectronic devices such as solar cells, sensors, LEDs, and lasers. Their strong light–matter interactions allow efficient light emission, detection, and energy conversion. This review article discusses the recent progress in integrating these materials with optical cavities and nanostructures ...
Janani Archana K, Kumar Shwetabh, Reyas Ali, Ramji Velayutham, Koustav Das, Abhishek Mondal, Prashant Kumar, Surendra B. Anantharaman   +7 more
wiley   +1 more source

The Stability Prediction and Epitaxial Growth of Boron Nitride Nanodots on Different Substrates. [PDF]

Molecules
Purnomo MJ, Febrita Y, Dinaryanto O, Gierlotka W, Yu IS.   +4 more
europepmc   +1 more source

Atomic Defects in Layered Transition Metal Dichalcogenides for Sustainable Energy Storage and the Intelligent Trends in Data Analytics

Advanced Science, EarlyView.
This review comprehensively summarizes the atomic defects in TMDs for their applications in sustainable energy storage devices, along with the latest progress in ML methodologies for high‐throughput TEM data analysis, offering insights on how ML‐empowered microscopy facilitates bridging structure–property correlation and inspires knowledge for precise ...
Zheng Luo, Ying Yang, Zizhen Fu, Fengqi Liu, Susu Fang, Kele Xu, Shanshan Wang   +6 more
wiley   +1 more source

Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition. [PDF]

Sci Rep
Dhasiyan AK, Amalraj FW, Jayaprasad S, Shimizu N, Oda O, Ishikawa K, Hori M.   +6 more
europepmc   +1 more source

Interface Engineering Suppresses Self‐Annealing in Electroplated Nanograined Copper for Low‐Temperature Copper‐to‐Copper Bonding

Advanced Science, EarlyView.
A (111)‐oriented nanotwinned copper substrate stabilizes the deposited nanograined copper and prevents self‐annealing by restricting grain boundary motion at the interface and promoting the formation of stacking faults within the nanograined copper. Its preserved nanostructure maintains bonding capability even after 30 days of storage, resulting in ...
Gangqiang Peng, Xinyi Dong, Binzhao Li, Chuan He, Cong Chen, Licheng Huang, Jian Liu, Yonghan Zhou, Qikai Li, Hao Gong, Yuechen Wang, Kaiyu Mu, Sheng‐Jye Cherng, Po‐Yen Yang, Yang Lu, Yong Yang, Shih‐Wei Hung, Shien‐Ping Feng   +17 more
wiley   +1 more source