Results 211 to 220 of about 14,202 (264)
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Epitaxial growth in one dimension
Journal of Physics: Condensed MatterAbstract The final structure and properties of layers grown by epitaxy techniques are determined in the very early stage of the process. This review describes one-dimensional models for epitaxial growth, emphasizing the basic theoretical concepts employed to analyze nucleation and aggregation phenomena in the submonolayer regime.
Juan David Álvarez-Cuartas +2 more
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Epitaxial Growth and Magnetism
MRS Proceedings, 1998AbstractGrowth phenomena and magnetism of metallic films are not easy to describe at the same level of precision. A small variation of distances can drastically modify the magnetic properties of thin metallic films. In this contribution different aspects encountered in the growth of thin magnetic metallic films are addressed.
H. Dreysse, M. Freyss, D. Stoeffler
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Mechanisms of epitaxial growth
Contemporary Physics, 1987Abstract ‘Epitaxy’ means order in the relative orientation of identical crystals nucleated and grown on a large single-crystal face. Every crystal of the deposited material is oriented in such a way that there is coincidence of some vectors of its reciprocal lattice with vectors of the reciprocal lattice of the substrate surface.
I. Markov, S. Stoyanov
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Selective epitaxial growth by molecular beam epitaxy
Semiconductor Science and Technology, 1993Selective epitaxial growth by molecular beam epitaxy (MBE) is realized at rather high substrate temperatures: 700 degrees for GaAs and 550 degrees C for InAs with a growth rate of 0.7 mu m h-1. Selectivity depends significantly on growth rate, As pressure and substrate temperature. Growth kinetic studies are carried out.
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Physics Bulletin, 1973
G W Cullen, E Kaldis, R L Parker and M Schieber (eds) Amsterdam: North Holland 1972 pp xii + 382 price Dfl 13000, $40.75 This volume contains just over half of the 80 papers presented at the second international conference on vapour growth and epitaxy held in Jerusalem during May 1972, and is the hardback edition of J. Crystal Growth 17 (December 1972).
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G W Cullen, E Kaldis, R L Parker and M Schieber (eds) Amsterdam: North Holland 1972 pp xii + 382 price Dfl 13000, $40.75 This volume contains just over half of the 80 papers presented at the second international conference on vapour growth and epitaxy held in Jerusalem during May 1972, and is the hardback edition of J. Crystal Growth 17 (December 1972).
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Materials Science and Technology, 1999
The mechanisms of epitaxial growth affect both the form of a deposit and the way in which lattice defects are introduced into the deposit.
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The mechanisms of epitaxial growth affect both the form of a deposit and the way in which lattice defects are introduced into the deposit.
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On the theory of epitaxial growth
Surface Science, 1986Abstract It is well known that the three modes of growth (layer, island and Stranski-Krastanov growth) correspond to three qualitatively different types of the μ(n) dependence — the chemical potential as a function of the film thickness (in monolayers).
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Dynamic Epitaxial Growth of Organic Heterostructures for Polarized Exciton Conversion
Advanced Materials, 2023Xue-Dong Wang, Ming-Peng Zhuo
exaly
Epitaxial growth of fcc clusters
Physical Review B, 1995, Valkealahti, , Näher, , Manninen
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