Results 201 to 210 of about 100,599 (299)

Surface Planarization-Epitaxial Growth Enables Uniform 2D/3D Heterojunctions for Efficient and Stable Perovskite Solar Modules. [PDF]

open access: yesAdv Sci (Weinh)
Lin D   +13 more
europepmc   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

open access: yesAdvanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero   +6 more
wiley   +1 more source

Oxygen Vacancies Driven Photoconductivity in Layered Cobaltite Epitaxial Films

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Understanding photoinduced phenomena in complex oxides is crucial for developing next‐generation optoelectronic devices. Here, we report pronounced ultraviolet (UV) light‐induced photoconductivity in epitaxial PrBa1‐xCaxCo2O5+δ (x = 0.5) thin films grown on (001) LSAT substrates via pulsed laser deposition.
Yanbin Chen   +5 more
wiley   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

open access: yesAdvanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim   +4 more
wiley   +1 more source

Ferromagnetic Resonance Response of bcc Fe60V40 Layers Generated from Short‐Range Ordered Precursors

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Layers of body‐centered cubic (bcc) Fe60V40 are generated in short‐range ordered (SRO) Fe60V40 precursors through atomic displacements caused by the irradiation of light noble gas ions. The structural change leads to the onset of ferromagnetism confined to the bcc layers. Here, the variation of ferromagnetic resonance response as a function of
Md. Shadab Anwar   +9 more
wiley   +1 more source

Facile Epitaxial Growth of Novel Nanoscale Ag-MAFs on Reverse Osmosis Membranes: Enhancing Performance, Antibacterial Activity, and (Bio)fouling Resistance. [PDF]

open access: yesACS Omega
Seyedpour SF   +9 more
europepmc   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix   +10 more
wiley   +1 more source

Home - About - Disclaimer - Privacy