Results 201 to 210 of about 39,172 (265)

Molecular Beam Epitaxial Growth and Optical Properties of InN Nanostructures on Large Lattice-Mismatched Substrates. [PDF]

Materials (Basel)
Nie R, Hu Y, Wu G, Li Y, Chen Y, Nie H, Wang X, Ren M, Li G, Zhang Y, Zhang B.   +10 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources. [PDF]

Sci Rep
Mondal KP, Gaowei M, Echeverria E, Evans-Lutterodt K, Jordan-Sweet J, Juffmann T, Karkare S, Maxson J, van der Molen SJ, Pennington C, Saha P, Smedley J, Stam WG, Tromp RM.   +13 more
europepmc   +1 more source

Epitaxial crystal growth proceedings of the 1st International Conference on Epitaxial Crystal Growth, Budapest, Hungary, April 1 - 7, 1990

, 1991
Lendvay, Edmond, International Conference on Epitaxial Crystal Growth 1990 Budapest   +1 more
core  

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Amorphous Silica Interlayer Unlocks Direct Epitaxial Growth of CsPbBr₃ on Silicon via Slip-and-Stick Mechanism. [PDF]

J Phys Chem Lett
Tantardini C, Argiolas S, De Padova P, Yakobson BI, Di Carlo A, Mattoni A.   +5 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

A General Solution to the Continuum Rate Equation for Island-Size Distributions: Epitaxial Growth Kinetics and Scaling Analysis. [PDF]

Nanomaterials (Basel)
Dubrovskii VG.
europepmc   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source

Surface Planarization-Epitaxial Growth Enables Uniform 2D/3D Heterojunctions for Efficient and Stable Perovskite Solar Modules. [PDF]

Adv Sci (Weinh)
Lin D, Fang J, Li S, Zhan Z, Li H, Wang X, Xie G, Wang D, Huang N, Peng H, Xie W, Ono LK, Qi Y, Qiu L.   +13 more
europepmc   +1 more source