Results 201 to 210 of about 14,202 (264)
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Epitaxial Growth of Surface Perforations on Parallel Cylinders in Terraced Films of Block Copolymer/Homopolymer Blends. [PDF]
Sun YS +6 more
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ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li +4 more
wiley +1 more source
Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition. [PDF]
Dhasiyan AK +6 more
europepmc +1 more source
On the epitaxial growth in ALD Co<sub>3</sub>O<sub>4</sub>- and NiO-based bilayers.
van Limpt RTM +3 more
europepmc +1 more source
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Surfactants in epitaxial growth
Physical Review Letters, 1989We have investigated the role of surface-active species (surfactants) in heteroepitaxial growth. In general, the growth mode is determined by the balance between surface, interface, and film free energies. Thus, if A wets B, B will not wet A. Any attempt at growing an A/B/A heterostructure must overcome this fundamental obstacle.
, Copel, , Reuter, , Kaxiras, , Tromp
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Nonuniversality in models of epitaxial growth
Physical Review B, 1996Kinetic roughening in two variants of a solid-on-solid model of epitaxial growth, a ‘‘toy’’ relaxation model and a collective diffusion model, is studied and compared, using extensive computer simulations in different spatial dimensions. We have studied the Wolf-Villain ~WV! model and its modifications, and a full diffusion ~FD!
, Kotrla, , Smilauer
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A Multiscale Method for Epitaxial Growth
Multiscale Modeling & Simulation, 2011In this paper we investigate a heterogeneous multiscale method (HMM) for interface tracking and apply the technique to the simulation of epitaxial growth. HMM relies on an efficient coupling between macroscale and microscale models. When the macroscale model is not fully known explicitly or not accurate enough, HMM provides a procedure for ...
Yi Sun, Russel Caflisch, Björn Engquist
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Epitaxial Film Growth and Characterization
2000Publisher Summary This chapter reviews the current status of epitaxial growth technology and the characterization of the deposited material. The production of cutting edge compound semiconductor devices requires the growth of high quality epitaxial layers.
Ferguson, I.T. +4 more
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Epitaxial Growth on Simox Wafers
MRS Proceedings, 1985ABSTRACTThe top silicon layer in as-implanted SIMOX wafer is usually too thin to support device fabrication. Hence, an epitaxial layer is usually grown on a SIMOX wafer after oxygen ion implantation and anneal. Because this epitaxial layer is typically very thin,less than 500 nm) and because of the material structure of the S1MOX wafer, special care ...
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