Results 201 to 210 of about 14,202 (264)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li   +4 more
wiley   +1 more source

Surfactants in epitaxial growth

Physical Review Letters, 1989
We have investigated the role of surface-active species (surfactants) in heteroepitaxial growth. In general, the growth mode is determined by the balance between surface, interface, and film free energies. Thus, if A wets B, B will not wet A. Any attempt at growing an A/B/A heterostructure must overcome this fundamental obstacle.
, Copel, , Reuter, , Kaxiras, , Tromp
openaire   +2 more sources

Nonuniversality in models of epitaxial growth

Physical Review B, 1996
Kinetic roughening in two variants of a solid-on-solid model of epitaxial growth, a ‘‘toy’’ relaxation model and a collective diffusion model, is studied and compared, using extensive computer simulations in different spatial dimensions. We have studied the Wolf-Villain ~WV! model and its modifications, and a full diffusion ~FD!
, Kotrla, , Smilauer
openaire   +2 more sources

A Multiscale Method for Epitaxial Growth

Multiscale Modeling & Simulation, 2011
In this paper we investigate a heterogeneous multiscale method (HMM) for interface tracking and apply the technique to the simulation of epitaxial growth. HMM relies on an efficient coupling between macroscale and microscale models. When the macroscale model is not fully known explicitly or not accurate enough, HMM provides a procedure for ...
Yi Sun, Russel Caflisch, Björn Engquist
openaire   +2 more sources

Epitaxial Film Growth and Characterization

2000
Publisher Summary This chapter reviews the current status of epitaxial growth technology and the characterization of the deposited material. The production of cutting edge compound semiconductor devices requires the growth of high quality epitaxial layers.
Ferguson, I.T.   +4 more
openaire   +1 more source

Epitaxial Growth on Simox Wafers

MRS Proceedings, 1985
ABSTRACTThe top silicon layer in as-implanted SIMOX wafer is usually too thin to support device fabrication. Hence, an epitaxial layer is usually grown on a SIMOX wafer after oxygen ion implantation and anneal. Because this epitaxial layer is typically very thin,less than 500 nm) and because of the material structure of the S1MOX wafer, special care ...
openaire   +1 more source

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